[15a-K303-1~10] 10.1 新物質・新機能創成（作製・評価技術）

9:00 〜 9:15奨励賞エントリー英語発表

[15a-K303-1] Epitaxial growth and strain control of altermagnetic CrSb thin films on GaAs (001) substrates

〇(D)Seiji Aota¹, Luming Zhou¹, Masaaki Tanaka^1,2,3 (1.The Univ. of Tokyo, 2.CSRN, The Univ. of Tokyo, 3.NanoQuine, The Univ. of Tokyo)

キーワード：

antiferromagnet、altermagnet

A newly discovered class of magnetic material called altermagnet has attracted much attention due to the spin-splitting bands akin to ferromagnets and compensated magnetization akin to antiferromagnets. Among the candidate materials, CrSb is a promising material for its high ordering temperature (Néel temperature) above 700 K and large spin-splitting energy, thus it has potential application for practical spintronics devices. we present the epitaxial growth of a single-crystalline CrSb thin films on GaAs (001) substrates by engineering buffer layers using molecular beam epitaxy. The epitaxial relationship is GaAs[-110] // CrSb[001] and GaAs(001) // CrSb(-110). On the other hand, the anomalous Hall effect expected from the symmetry change by the epitaxial strain has not been observed. We also investigated the effects of annealing and modulation of the strain using graded buffer layers of III-V semiconductors.