講演情報
[15a-K303-10]Current-induced magnetization switching in SOT devices with low-Z element based underlayer
〇(P)GAURAV KUMAR SHUKLA1, PRABHAT KUMAR1, SHINJI ISOGAMI1 (1.NIMS)
キーワード：
Spin-orbit torque、Magnetic memory device、Two-dimensional MXene
Spintronics, which uses electron spin for information processing, promises high-speed, low-power, and high-density memory devices. The Spin Hall Effect (SHE) is key in spintronics, converting charge current into spin current via spin-orbit coupling (SOC). This spin current is useful for spin-orbit torque (SOT)-based memory devices. Low-Z element-based systems are appealing due to their compatibility with semiconductor technology, thermal stability, and cost-effectiveness, though investigated sample space is quite limited.This study examines SHE in low-Z element-based transition metal nitride (TMN) system and demonstrates magnetization switching in a top ferromagnetic layer. TMNs, with unique spin properties and sufficient SOC, show potential for low-dimensional materials. The study focuses on CrN TMN thin film, revealing finite spin Hall conductivity (SHC) at the Fermi energy. A fabricated device demonstrated current-induced magnetization switching (CIMS), highlighting the potential of low-Z element-based materials for SOT-based memory technology.