[15a-K303-1~10] 10.1 新物質・新機能創成（作製・評価技術）

11:15 〜 11:30英語発表

[15a-K303-9] Current-induced magnetization switching in SOT devices with 2D-MXene underlayer

Prabhat Kumar¹, Yoshio Miura^1,2, Gaurav Shukla¹, 〇Shinji Isogami¹ (1.NIMS, 2.KIT)

キーワード：

Two-dimensional MXene、Magnetic memory device、Spin-orbit torque

We focus on the atomically layered, Cr₂N, one of the two-dimensional MXene phases M_n+1X_n (n = 1, 2, 3), which is recently grabbing attention due to a tunable bandgap, large/robust spin orbit coupling, a stable magnetic ground state, and stable half-metallic transport properties. Al₂O₃ sub.//Cr₂N(5)/[Co(0.35)/Pt(0.3)]_×3/MgO(2) was deposited, and its current-induced magnetization switching (CIMS) is investigated. We found full CIMS at Hx ≠ 0 kOe. However, the occurrence of CIMS at Hx = 0 kOe indicates that Cr₂N MXene is effective for a field-free CIMS, which is unique to our results. Further, a detailed experimental result emphasizing the role of MXene will be presented in terms of two aspects, which are the booster layer for the self-induced spin-orbit torque and spin source.