講演情報
[15a-K503-2]Effects of thickness scaling on switching kinetics in (Al,Sc)N ferroelectric films
〇(P)Nana Sun1, Kazuki Okamoto1, Soshun Doko1,2, Naoko Matsui2, Toshikazu Irisawa2, Koji Tsunekawa2, Hiroshi Funakubo1 (1.Science Tokyo, 2.Canon ANELVA)
キーワード：
(Al、Sc)N ferroelectrics、thickness scaling、switching kinetics
Effects of thickness scaling on the crystal structure and switching kinetics in (Al,Sc)N film were investigated. The (Al,Sc)N films with thickness of 30-80 nm show wurtzite structure with (001) out-of-plane orientation. The full-width at half-maximum (FWHM) did not show obvious change for the 80 nm- and 50 nm-thick films, but it increased significantly when the film thickness is down to 30 nm. The remanent polarization of the films did not show obvious change within the thickness range, and the coercive field increased with scaling the thickness as expected. The dimension of domain growth of the 80 nm-thick film was above 1 which was consistent with the Kolmogorov-Avrami-Ishibashi (KAI) model, while it decreased to below 1 for the 30-50 nm film which is possible to switch to the nucleation-limited switching (NLS) model. This result suggests the transition of the switching behaviors from KAI to NLS with scaling the thickness.