講演情報
[15a-P06-2]Enhancing Structural and Optical Properties in AZO Co-doped MgZnO Thin Films via Post-Annealing for Advanced Photonics
Kazi Sajedur Rahman1, Puvaneswaran Chelvanathan1, 〇(PC)Abdul A Kuddus2, Shinichiro Mouri2 (1.Univ. Kebangsaan, 2.Ritsumeikan Univ.)
キーワード：
Oxide materials、Co-Doping、Annealing treatment
Aluminum (Al) and magnesium (Mg) co-doping in zinc oxide (ZnO) offer a transformative approach to enhancing optoelectronic properties, driving advancements in photonic technologies. Magnesium-doped ZnO (MgZnO, MZO), known for its high transparency and conductivity, is particularly suited as a front contact material for cadmium telluride (CdTe) solar cells. In this study, MZO thin films were synthesized via RF-magnetron sputtering, co-doped with aluminum-doped ZnO (AZO), and optimized through post-annealing at 350 °C, 450 °C, and 550 °C.
The results demonstrate synergistic improvements: enhanced crystallinity with a cubic zinc blende (002) plane, increased grain size (31.3 nm to 64.6 nm), and a tunable bandgap (3.32–3.65 eV). These properties establish AMZO films as exceptional high-resistance transparent (HRT) layers for optoelectronic devices.
This study underscores AMZO thin films' potential for next-generation solar cells, photodetectors, and sensors, offering a versatile platform for customizable, high-performance materials in photonic applications.
The results demonstrate synergistic improvements: enhanced crystallinity with a cubic zinc blende (002) plane, increased grain size (31.3 nm to 64.6 nm), and a tunable bandgap (3.32–3.65 eV). These properties establish AMZO films as exceptional high-resistance transparent (HRT) layers for optoelectronic devices.
This study underscores AMZO thin films' potential for next-generation solar cells, photodetectors, and sensors, offering a versatile platform for customizable, high-performance materials in photonic applications.