講演情報
[15p-K302-8]Improved photovoltaic properties of ZnTe-based solar cells through Al diffusion in high-quality P-doped ZnTe layers using a cracked Zn3P2 dopant source by MBE
〇(D)Muhamad Mustofa1, Katsuhiko Saito1, Qixin Guo1, Tooru Tanaka1 (1.Saga Univ.)
キーワード：
Phosphorus doping、Molecular Beam Epitaxy、ZnTe based solar cell
Phosphorus (P) doped ZnTe thin films were grown by molecular beam epitaxy (MBE) using cracked Zn3P2 source where P4 molecular beam from Zn3P2 is cracked to P2 molecular beam to enhance the P incorporation into ZnTe. A heterojunction solar cell was also fabricated using P-doped ZnTe as the absorber layer with n-ZnS as the window layer with one structure featuring Al diffusion in P-doped ZnTe layer and the other without it. The secondary ion mass spectroscopy (SIMS) analyses of P-doped ZnTe films indicate the linear increase of P concentration as increasing Zn3P2 flux from 8.3 x 1016 cm-3 to 4.8 x 1017 cm-3. Therefore, good controllability of P concentration using the cracking cell was confirmed. The higher Voc recorded in ZnTe solar cell was achieved due to the insertion of P-doped ZnTe layer. The introduction of Al diffusion layer shows the improvement by achieving an open circuit voltage (VOC) of 0.9 V with a short-circuit current density (JSC) of 5.87 mA/cm2 compared with the structures without Al diffusion layer.