[15p-K503-1~15] 6.1 強誘電体薄膜

15:15 〜 15:30奨励賞エントリー英語発表

[15p-K503-9] Temperature dependence of crystal structure of epitaxial KNN thin films on Si

〇(M2)JINGWEI HE¹, Sang Hyo Kweon¹, Isaku Kanno¹ (1.Kobe Univ.)

キーワード：

lead-free piezoelectric material、post-annealing、KNN

(K,Na)NbO₃ (KNN) thin films are of interest as a lead-free piezoelectric MEMS material because of their high Curie temperature and excellent piezoelectric properties. In this study, high-temperature XRD measurements of KNN epitaxial films were carried out to evaluate the effect of annealing on KNN films and to observe the changes of crystalline phases at different temperatures.