講演情報
[15p-K509-4]Atomic Insight for Regulation of Interfacial Thermal Transport Between Si and AlN via Machine Learning Potential
〇(D)Wang Weitao1, Yunhui Wu1, Sebastian Volz1, Masahiro NOMURA1 (1.The Univ. of Tokyo)
キーワード：
Machine Learning Potential、Molecular Dynamic Simulation、Thermal Boundary Resistance
Three-dimensional integrated circuits (3D ICs) have emerged as a key technology for next-generation electronic devices due to their high density and superior performance. However, the stacked structure of 3D ICs significantly limits heat dissipation, leading to thermal accumulation, the unavoidable Joule self-heating effect can greatly affect the device lifetime and efficiency. In these silicon devices, SiO2 is used as an insulator, but it has low thermal conductivity. Therefore, from the viewpoint of heat dissipation, an insulator with higher thermal conductivity that is compatible with the Si process is desirable, and AlN is one of the candidates. In this research, we explore the use of AlN to partially replace low-thermal conductivity SiO2 in Si-based advanced semiconductor devices with 3D integrated circuits. To investigate the thermal transport characteristics at Si-AlN interfaces, the machine learning potential (MLP) for Si-AlGaN is first established, and the thermal boundary resistance (TBR) of Si-AlN and Si-amorphous AlGaN samples are evaluated by both molecular dynamic (MD) simulation and time-domain thermoreflectance (TDTR) measurement. The interfacial atomic ordering is changed by the introduction of AlGaN interlayers, to observe the impact of these changes on thermal transport, scanning transmission electron microscopy (STEM) is employed to examine the Si-AlN/AlGaN-AlN interface. From the atomic level, the density of states (DOS) analysis and phonon transmission coefficient are utilized to explain the impact of various interface configurations on thermal transport. In addition, phonon wave packet simulations further revealed the influence of atomic ordering at the interface on phonon transport.
This work provides valuable insights into understanding the interfacial thermal transport between silicon and nitride semiconductors and useful guidance for thermal management via interface engineering.
This work provides valuable insights into understanding the interfacial thermal transport between silicon and nitride semiconductors and useful guidance for thermal management via interface engineering.