講演情報
[15p-P12-23]Analysis of Electronic States in Mist CVD AlxTi1-xOy Thin Films for 2D-Layered Optoelectronics: Impact of Compositions and Post-treatments
〇(PC)Abdul A Kuddus1, Abdurashid Mavlonov1, Keiji Ueno2, Kazi Sajedur Rahman3, Takashi Minemoto1, Hajime Shirai2, Shinichiro Mouri1 (1.Ritsumeikan Univ., 2.Saitama Univ., 3.Univ. Kebangsaan)
キーワード：
Electronic states、Mist CVD、Optoelectronics
High permittivity (k) and wide bandgap (Eg) dielectrics are pivotal for advancing nanoelectronics and photonics by enhancing charge control, minimizing leakage currents, and enabling device miniaturization. However, achieving ultrathin dielectrics with tunable electronic and optical properties remains a challenge, particularly for two-dimensional (2D) semiconductors. This study investigates the electronic and optical properties of aluminum-titanium oxide (Al0.7Ti0.3Oy, ATO) thin films synthesized via mist chemical vapor deposition (CVD), focusing on compositional tuning and post-deposition treatments.
Amorphous ATO films (~40 nm) were deposited on n-Si substrates from Al(acac)3 and Ti(acac)2OiPr2 precursors. AFM imaging shows smooth surfaces with RMS roughness of 0.8 nm for 30% Ti, increasing at higher Ti concentrations due to crystallization. A significant bandgap shift (from ~4.15 eV to 5.2 eV) was observed with 30% Ti. Photoelectron Yield Spectroscopy (PYS) reveals that Ti incorporation alters ionization energy and suppresses yield, indicating shifts in the Fermi level and valence electron redistribution. These findings highlight ATO’s potential for advanced 2D layered optoelectronics, offering modulated energy alignment for next-generation devices.
Amorphous ATO films (~40 nm) were deposited on n-Si substrates from Al(acac)3 and Ti(acac)2OiPr2 precursors. AFM imaging shows smooth surfaces with RMS roughness of 0.8 nm for 30% Ti, increasing at higher Ti concentrations due to crystallization. A significant bandgap shift (from ~4.15 eV to 5.2 eV) was observed with 30% Ti. Photoelectron Yield Spectroscopy (PYS) reveals that Ti incorporation alters ionization energy and suppresses yield, indicating shifts in the Fermi level and valence electron redistribution. These findings highlight ATO’s potential for advanced 2D layered optoelectronics, offering modulated energy alignment for next-generation devices.