講演情報
[16a-K202-5]Atomic Layer Process (ALP) for Metal Oxide Thin Films: Enhancing Selectivity and Inhibitors’ Role
Hae Lin Yang1, Gyeong Min Jeong1, i-Hyeon Kwon1, Min Chan Kim1, 〇Jin-Seong Park1 (1.Hanyang University)
キーワード：
Area Selective Atomic Layer Deposition、Small Molecular Inhibitors、Metal Oxide thin films
The precise deposition of metal oxide thin films onto various substrates without additional patterning is essential for advanced semiconductor patterning. Area-selective atomic layer deposition (AS-ALD) offers a promising solution, enabling selective deposition and preventing unwanted coverage. Small molecular inhibitors (SMIs) with aliphatic alkyl chains, like DMA-TMS, TMPS, and Hacac, are widely studied for AS-ALD, enabling precise control on nanometer-scale patterns. However, research on SMIs with aromatic blocking groups is limited. This study explores the chemical and physical passivation abilities of four Si-based SMIs with phenyl ligands: TCPS, MDCPS, CDMPS, and DCDPS. DFT calculations reveal that TCPS, MDCPS, and CDMPS prefer exothermic adsorption reactions on SiO2 surfaces, leading to a significant increase in water contact angle (3-40°), confirming successful passivation. Monte Carlo simulations showed that MDCPS (91% surface coverage) exhibited superior passivation and selectivity, surpassing aliphatic SMIs like DMA-TMS. These findings demonstrate the advantages of aromatic SMIs for semiconductor applications.