講演情報
[16a-P08-1]Analysis of 1.27μm Near-Infrared Quantum Cascade Lasers using Si/CaF2 Heterostructures on SOI Substrate
〇Zhiyuan Fan1, Hyuma Suzuki1, Haibo Wang1, Masahiro Watanabe1 (1.Science Tokyo)
キーワード：
Quantum cascade laser
Silicon lasers for optical integrated device applications on silicon substrates have long been a challenge to realize due to the indirect band gap. Quantum Cascade Laser (QCL) scheme based on intersubband transition is a promising candidate for light amplification device principle even using indirect band gap material such as Si. In this study, we have proposed QCL using Si/CaF2 heterostructures targeting near infrared light emitting devices with potential possibility of integration of Si-LSI technology.
Si was used as quantum-wells (QWs) and calcium fluoride (CaF2) as barriers in active layers.CaF2 is known to be a low optical loss material for wide range from mid-infrared to extreme ultraviolet wavelength region, it has been widely used for low optical loss components, and its lattice has low mismatch with Si (+0.6%), therefore, it can be well integrated in Si based heterostructure devices.
In our previous work, we have demonstrated electroluminescence of 1.7 μm, 1.2 μm and light propagation in waveguides using Si/CaF2 QWs. In this work we have proposed and analyzed a near-infrared QCL structure with wavelength of 1.27 μm using Si/CaF2 QWs with injection layers composed of the sequence of the ground states of Si-QWs.
Si was used as quantum-wells (QWs) and calcium fluoride (CaF2) as barriers in active layers.CaF2 is known to be a low optical loss material for wide range from mid-infrared to extreme ultraviolet wavelength region, it has been widely used for low optical loss components, and its lattice has low mismatch with Si (+0.6%), therefore, it can be well integrated in Si based heterostructure devices.
In our previous work, we have demonstrated electroluminescence of 1.7 μm, 1.2 μm and light propagation in waveguides using Si/CaF2 QWs. In this work we have proposed and analyzed a near-infrared QCL structure with wavelength of 1.27 μm using Si/CaF2 QWs with injection layers composed of the sequence of the ground states of Si-QWs.