講演情報
[16a-Y1311-4]Impact of thermal annealing and channel thickness on electrical characteristics and instability of ultrathin AlOx/InOx FETs
〇CHIATSONG CHEN1, Kasidit Toprasertpong2, Toshifumi Irisawa1, Shinji Migita1, Wen-Hsin Chang1, Yukinori Morita1, Hiroyuki Ota1, Tatsuro Maeda1 (1.AIST, 2.hte Univ. of Tokyo)
キーワード：
oxide semiconductor、ultrathin body channel、reliability
Oxide semiconductor (OS) materials, especially for InOx-based channels, have gained significant attention for BEOL 3D monolithic integration, thanks to their low fabrication temperatures and high mobility even in thin body channels. Moreover, vertical OS FET can be realized using ALD system, which offers excellent thickness controllability, uniformity and step coverage. However, a critical issue in OS FETs is the trade-off between device performance and bias instability, which can be mitigated by post-deposition process. In this work, we investigated the effect of annealing in N2 or O2 at different temperatures on the performance and bias stability of AlOx-passivated InOx (AlOx/InOx) FETs with different channel thicknesses. It is considered that excess oxygen and hydrogen incorporation from gate dielectric play a key role on performance and stability degradation.