講演情報
[16p-K307-15]Nano-cross-point Ferroelectric Tunnel Junction based on Nanosheet Ferroelectric
〇(M1)Aditya Arun Nirmale1, Minoru Osada2, Yutaka Majima1 (1.Inst. of Sci. Tokyo, 2.Nagoya Univ.)
キーワード：
ferroelectric tunnel junction、non volatile memory、perovskite nanosheet
This study unveils a novel nano-cross-point ferroelectric tunnel junction (FTJ) leveraging 2D Dion-Jacobson perovskite nanosheets (Pb2Nb3O10). These nanosheets exhibit exceptional dielectric properties and polarization stability at atomic scales, enabling robust tunnel electroresistance (TER) effects with ultra-long retention (>10,000 s) and high endurance (>100 cycles). Fabricated via precise electron beam techniques, this work demonstrates the viability of nanosheet ferroelectrics in nano-cross-point FTJs and highlights their potential for next-generation memory technologies.