講演情報
[16p-K308-11]Potential-induced degradation of n-type front-emitter crystalline silicon photovoltaic modules with various encapsulants and cover materials
〇(M2)Nguyen TranTrung Duc, Keisuke Ohdaira
キーワード：
Potential-induced degradation、n-type crystalline silicon solar cell、Photovoltaic module
This study addresses the potential-induced degradation (PID) of n-type front-emitter crystalline silicon (c-Si) photovoltaic (PV) modules with ethylene-vinyl acetate (EVA) and polyvinyl butyral (PVB) as encapsulants and two cover materials: polycarbonate (PC) and glass. Applying a negative bias of −1000 V at 85 °C to 20×20 mm²-sized cells, the modules using EVA or PVB with cover glass show decreases in the short-circuit current density (Jsc) and the open-circuit voltage (Voc), typical behavior of the polarization-type PID (PID-p). In contrast, the modules with PC cover show almost no decrease in Voc, indicating that PC mitigates PID-p in c-Si PV modules.