講演情報
[16p-K309-3]Near-infrared photodetector of Ge epitaxial layer on Si patterned substrate (2)
Koki Tsutsumi1, 〇(D)FAIZ FAIZ MOHD1, Jose A. Piedra-Lorenzana1, Takeshi Hizawa1, Tetsuya Nakai2, Yasuhiko Ishikawa1 (1.Toyohashi Univ. Tech., 2.SUMCO)
キーワード：
Germanium epitaxial film、CVD growth、Near-infrared photodetector
A Ge epitaxial layer on Si is employed as near-infrared photodetectors (PDs) in Si photonics. Recently, we have reported a pin PD of a Ge layer prepared on a Si surface patterned with an array of trenches of 500 nm in width and spacing. The threading dislocation density in Ge is reduced by using such a patterned substrate. As a result, the leakage current decreased with maintaining the responsivity at the wavelength of around 1550 nm when the trench depth was 100 nm. However, when the trench depth was increased to 200 nm, the responsivity was degraded. In this study, the mechanism of the responsivity degradation is investigated based on X-ray diffraction (XRD) and scanning electron microscope (SEM) analyses.