講演情報
[17a-K301-10][The 46th Young Scientist Award Speech] kV-class Vertical GaN Junction Barrier Diodes using Mg Implantation
〇Dolar Khachariya1, Will Mecouch1, Seiji Mita1, Shashwat Rathkanthiwar2, Pramod Reddy1, Ronny Kirste1, Kacper Sierakowski3, Grzegorz Kamler3, Michal Bockowski3, Erhard Kohn2, Spyridon Pavlidis2, Ramon Collazo2, Zlatko Sitar1,2 (1.Adroit Materials Inc., Cary, NC, USA, 2.North Carolina State Univ., Raleigh, NC, USA, 3.Institute of High Pressure Physics, Sokolowska, Warsaw, Poland)
キーワード：
Vertical GaN power devices、High breakdown voltage、Low on-resistance
Selective area p-type doping has been a major technological hurdle for vertical GaN-based devices. It is an essential building block for a variety of devices, including MOSFETs and junction barrier Schottky (JBS) diodes. Moreover, edge terminations such as junction termination extensions (JTEs) also rely on selective area doping to control the electric field distribution and enable high-voltage operation. Recently, we demonstrated 915 V breakdown GaN JBS diodes using Mg implantation followed by ultra-high pressure annealing (UHPA). In this work, we demonstrate record performance kV-class JBS diodes with RON of 2.0 mOhm.cm2 and breakdown voltage (BV) of 1900 V corresponding to a figure of merit of 1.8 GW.cm-2.