講演情報
[17a-K305-5]Investigation of III-V/SOI hybrid laser structure with Si double-ring-resonators and SiN front-side coupling
〇Moataz Eissa1, Yoshitaka Ohiso1, Tsuyoshi Horikawa1, Nobuhiko Nishiyama1,2,3 (1.EEE Dept., 2.IIR, 3.PETRA)
キーワード：
silicon photonics、heterogeneous integration、wafer bonding
The increasing demand for efficient, compact, and scalable photonic systems has driven research to overcome silicon’s nonlinear limitations at higher power levels (> 10 mW). In this work, we present a hybrid III-V on SOI external cavity laser structure that integrates silicon double-ring-resonators with a loop mirror at the back-side of the cavity and an interlayer coupler at the front-side to transition to a silicon nitride (SiN) photonic integrated circuit (PIC). This asymmetric design leverages the complementary strengths of both platforms: silicon's compact size and relatively lower tuning power and SiN's wide bandgap and negligible nonlinear absorption at the output, allowing the system to achieve high power levels with reduced nonlinear loss.
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