講演情報
[17a-P01-10]Silicon Carbide Formation on Si wafer via CVD Carbonization
〇Pengyu ZHANG1,2, Qinqiang ZHANG1, Wipakorn Jevasuwan1, Naoki Fukata1,2 (1.NIMS, 2.Univ. of Tsukuba)
キーワード：
SiC、nanowire
Silicon carbide (SiC) is an ideal material for wide-bandgap electronic applications due to its superior physical and electrical properties. SiC exhibits a wide bandgap, high thermal conductivity, excellent chemical stability, and high breakdown electric field strength. These properties make SiC suitable for high-power, high-temperature, and high-frequency devices, such as power switches, diodes, and FETs.Despite its advantages, achieving a high-quality, continuous SiC thin film on a Si substrate remains challenging. During low-pressure processes, controlling the reaction rate is difficult due to the rapid reaction between Si and CH4 influenced by residual O2 at high temperatures. Additionally, Ar, used as a carrier gas, facilitates the transport of vaporized Si, complicating deposition control.To address these issues, we developed a novel Close Space Technique (CST) method. The CST approach reduces the velocity of the CH4/Ar flow within a confined space between boundary layers. CH4 serves as the carbon source, while additional carbon is pre-deposited on a separate wafer. Under high temperatures, this pre-formed carbon reacts with the Si wafer surface, minimizing reliance on gas-phase CH4. This modified CST method offers improved control over SiC formation, providing a unique strategy for producing high-quality SiC thin films.