講演情報
[17a-Y1311-1][The 46th Young Scientist Award Speech] Anisotropic NiOx/β-Ga2O3 p-n heterojunctions on (-201), (001), and (010) β-Ga2O3 substrates
〇Dinusha Herath Mudiyanselage1, Ramandeep Mandia2, Dawei Wang1, Jayashree Adivarahan1, Ziyi He1, Kai Fu3, Yuji Zhao4, Martha R. McCartney5, David J. Smith5, Houqiang Fu1 (1.School of Electrical, Computer, and Energy Engineering, Arizona State University, 2.School of Engineering for Matter, Transport and Energy, Arizona State University, 3.Department of Electrical and Computer Engineering, The University of Utah, 4.Department of Electrical and Computer Engineering, Rice University, 5.Department of Physics, Arizona State University)
キーワード：
wide bandgap semiconductor