[17p-K101-1~12] 13.5 デバイス／配線／集積化技術

14:00 〜 14:15

[17p-K101-3] Silicon Lateral Power MOSFET Using Thim Film Super-Junction Structure

〇(M2)Jinsoo Lee¹, Tomoyoshi Kushida¹, Takuya Saraya¹, Munetoshi Fukui¹, Masaharu Kobayashi^1,2, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo, 2.d.lab, Univ. of Tokyo)

キーワード：

Super-Junction Structure

Silicon has an advantage over other power semiconductor materials in terms of reliability, price, and process maturity, and lateral power devices have the advantage of integrating with CMOS circuits. In this study, simulation is performed with a device structure introduced with a thin film super junction (SJ) structure to improve the performance of silicon lateral power MOSFET, showing performance exceeding the silicon limit.