講演情報
[17p-K101-4]The Influence of Hole Gas Accumulation on the Performance of Ge/Si Core–Shell Nanowire SWIR Photodetectors.
〇(D)Guanghui WANG1,2, Chao Le1,2, Wipakorn JEVASUWAN2, Naoki Fukata2 (1.Univ. of Tsukuba, 2.NIMS)
キーワード：
SWIR photodetector、silicon、nanowire
Ge/Si core-shell nanowires are promising for next-generation electronics and optoelectronics[1]. Their core-shell design separates the carrier transport region from the impurity-doped area by forming hole gas at the interfaces[2], [3]. However, there is limited direct evidence connecting this hole gas accumulation to device performance. In this work, vertically aligned Ge/Si core nanowires with various diameters were fabricated using a top-down process involving electron beam lithography (EBL) and chemical vapor deposition (CVD). A high-performance short-wave infrared (SWIR) photodetector was then created using these nanowires. By adjusting the hole gas concentration, the device achieved a maximum responsivity of 16.57 A/W under near-infrared light at 1200 nm, and even without any bias, it maintained a responsivity of 2.78 A/W.