講演情報
[17p-K501-2]Study of HfxZr1-xO2/Si interface potential by terahertz emission spectroscopy
〇(M2)TIANKAI JIA1, Dongxun Yang2, Haining Li2, Manjakavahoaka Razanoelina1, Takahiro Teramoto3, Takeshi Kijima2, Hiroyasu Yamahara2, Munetoshi Seki2, Hitoshi Tabata2, Masayoshi Tonouchi4, Iwao Kawayama1 (1.Kyoto University, 2.The University of Tokyo, 3.The University of Kitakyushu, 4.Osaka University)
キーワード：
terahertz emission spectroscopy、hafnium zirconium oxide、interface potantial
Hafnium zirconium oxide (HfxZr1-xO2, HZO) is a key material in semiconductor technologies due to its ferroelectricity and high dielectric constant. However, the performance of HZO-based devices is strongly affected by the HZO/Si interface, where charge trapping and potential shifts occur. While bulk HZO properties are well-studied, interfacial dynamics remain unclear, posing challenges for device optimization.
This study uses terahertz emission spectroscopy (TES), a non-contact characterization method, to examine the interface potential and charge dynamics of HZO/Si heterostructures. Figure 1(a) shows THz waveforms indicating stronger conduction band bending and higher THz emission with increasing Zr content, attributed to interface states like vacancies. As gate voltage increases from -5V to 15V, THz amplitude decreases, indicating a reversal from accumulation to depletion/inversion, approximating the flat-band voltage, as shown in Figure 1(b).
This work was supported by JST, CREST Grant Number JPMJCR22O2, Japan.
This study uses terahertz emission spectroscopy (TES), a non-contact characterization method, to examine the interface potential and charge dynamics of HZO/Si heterostructures. Figure 1(a) shows THz waveforms indicating stronger conduction band bending and higher THz emission with increasing Zr content, attributed to interface states like vacancies. As gate voltage increases from -5V to 15V, THz amplitude decreases, indicating a reversal from accumulation to depletion/inversion, approximating the flat-band voltage, as shown in Figure 1(b).
This work was supported by JST, CREST Grant Number JPMJCR22O2, Japan.