講演情報
[17p-K501-8]Investigation on N-doped Cu2O Thin Films for High-Performance Cu2O/Ga2O3 p-n Junction Power Devices
〇Minseok Kim1, Daichi Miyagi1, Isao Tamai2, Yusuke Maeyama2, Yuki Oguchi1, Junjun Jia3, Yuzo Shigesato1 (1.Aoyama Gakuin Univ., 2.Shindengen Electric Manufacturing Co.,Ltd., 3.Waseda univ.)
キーワード：
Cu2O、sputtering、Power device
The demand for Ga2O3-based power devices is growing rapidly due to their ability to support high-voltage and high-power capacities, which are essential for modern electronic systems and reducing carbon emissions. However, while Ga2O3 is an n-type semiconductor, p-type materials are required to fabricate efficient p-n junction power devices. Among various p-type semiconductors, Copper(I) oxide (Cu2O) is an attractive candidate due to its non-toxic nature, abundant availability, and direct band gap.
In this study, nitrogen-doped (N-doped) Cu2O thin films were deposited on alkali-free glass substrates (AN100) via reactive radio frequency (RF) magnetron sputtering, using either Cu metal or Cu2Otargets. Ar, O2, and N2 gases were employed as sputtering and reactive gases. For Cu metal targets, the oxygen flow ratio {fO2 = O2/(O2 + Ar)} was 10%, while for N-doped Cu2O depositions, an additional nitrogen flow ratio of up to ~3% was introduced. The XRD results confirm that all the films are the polycrystalline Cu2O cuprite structure. However, a noticeable degradation in the (111) preferred orientation was observed with the increasing nitrogen flow, particularly for the films deposited using Cu2O targets. Device performances imply the possible correlation between (111) preferred crystal orientation and leakage currents, emphasizing the critical role of nitrogen doping parameters and the Cu2O polycrystalline structure. The difference in the film properties between the sputter depositions using the Cu and Cu2O targets will be also discussed in detail.
In this study, nitrogen-doped (N-doped) Cu2O thin films were deposited on alkali-free glass substrates (AN100) via reactive radio frequency (RF) magnetron sputtering, using either Cu metal or Cu2Otargets. Ar, O2, and N2 gases were employed as sputtering and reactive gases. For Cu metal targets, the oxygen flow ratio {fO2 = O2/(O2 + Ar)} was 10%, while for N-doped Cu2O depositions, an additional nitrogen flow ratio of up to ~3% was introduced. The XRD results confirm that all the films are the polycrystalline Cu2O cuprite structure. However, a noticeable degradation in the (111) preferred orientation was observed with the increasing nitrogen flow, particularly for the films deposited using Cu2O targets. Device performances imply the possible correlation between (111) preferred crystal orientation and leakage currents, emphasizing the critical role of nitrogen doping parameters and the Cu2O polycrystalline structure. The difference in the film properties between the sputter depositions using the Cu and Cu2O targets will be also discussed in detail.