[17p-K507-1~6] 7.3 微細パターン・微細構造形成技術

13:30 〜 13:45英語発表

[17p-K507-3] Characterization of Electron Beam Lithography-based Direct Patterning of PEDOT:PSS on Si, SOI, and SiO₂Substrates

〇(D)Yandong Yang¹, Shin'ichi Warisawa¹, Reo Kometani¹ (1.Univ. of Tokyo)

キーワード：

PEDOT:PSS、electron beam lithography

Fine patterning is crucial for Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) towards applications. PEDOT:PSS has previously been shown to behave as a negative-tone resist on electron beam lithography (EBL),but the ability of EBL in patterning PEDOT:PSS has not been fully clarified.In this work, the electron beam lithography-based direct patterning of PEDOT:PSS on various substrates was evaluated. A minimum linewidth of 80 nm was achieved on Si substrates, lines with width of 88 nm were obtained on SOI substrates and 88 nm on SiO₂ substrates. when the exposure dose is larger than 100 mC/cm², the pattern linewidths on SOI and SiO₂ substrates are significantly wider than that on Si substrates. We suggest that the reason is the charging effect during electron beam exposure due to the insulating nature of SiO₂ and SOI substrates, and the charging effect may widen the exposure region. The contrast of PEDOT:PSS on Si, SOI and SiO₂ substrate was calculated to be 0.66, 0.60, and 0.56, respectively.