[A-1-1]Nanowire Field Effect Transistor
Lars-Erik Wernersson(1.Solid State Physics, Lund University)
2006 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2006PACIFICO Yokohama, Yokohama, Japan
You can search for presentations in this event.
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2006 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2006PACIFICO Yokohama, Yokohama, Japan
You can search for presentations in this event.
SearchSearch Results(566)
[A-1-2]Infrared detection with silicon nano transistors
K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi(1.NTT Basic Research Labs., NTT Corporation, 2.Research Institute of Electronics, 3.Graduate School of Information Science and Technology)
[A-1-3]High-Resolution Measurement of Ultra-Shallow Structures by Scanning Spreading Resistance Microscopy
Li Zhang, Kazuya Ohuchi, Kanna Adachi, Mitsuhiro Tomita, Kazunari Ishimaru, Mariko Takayanagi, Akira Nishiyama(1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 2.Center For Semiconductor Research & Development, Toshiba Corporation Semiconductor Company)
[A-1-4]Imaging of interference between incident and reflected electron waves at an InAs/GaSb heterointerface by low-temperature scanning tunneling spectroscopy
K. Suzuki, K. Kanisawa, S. Perraud, M. Ueki, K. Takashina, Y. Hirayama(1.NTT Basic Research Laboratories, NTT Corporation, 2.Laboratoire de Photonique et de Nanostructures, CNRS, 3.NTT Electronics Techno Corporation, 4.SORST-JST, 5.Graduate School of Science, 6.Tohoku University)
[A-1-5]Magnetopiezoresistance effects in an In As/AlGaSb nanomechanical resonator with extremely small power consumption
Imran Mahboob, H. Okamoto, M. Ueki, H. Yamaguchi(1.NTT Basic Research Laboratories, NTT Corpration, 2.NTT Electronics Techno Inc., 3.NTT Basic Research Laboratories, NTT Corpration)
[A-1-6]Structure, strength and conductance of palladium wires of single atom width
Tomoko Matsuda, Tokushi Kizuka(1.Institute of Materials Science, University of Tsukuba, 2.Special Research Project of Nanoscience, University of Tsukuba, 3.Precursory Research for Embryonic Science and Technology)
[A-2-1]Single photon detectors based on quantum dot devices ? from principle of operation to single photon counting.
B E Kardynal, S S Hees, P See, A J Shields, I Farrer, D A Ritchie(1.Toshiba Research Europe Ltd, 2.Cavendish Laboratory, University of Cambridge)
[A-2-2]Optical Properties of Dynamically-Modulated Dots and Wires Formed by Surface Acoustic Waves
Tetsuomi Sogawa, Hideki Gotoh, Yoshiro Hirayama, Tadashi Saku, Sen Miyashita, Paulo V. Santos, Klaus H. Ploog(1.NTT Basic Research Laboratories, NTT Corporation, 2.NTT Advanced Technology Corp., 3.Paul Drude Institute)
[A-2-3]Photon Statistics in a Thick Barrier Coupled Quantum Dot
Shohgo Yamauchi, Amane Shikanai, Isao Morohashi, Shigenori Furue, Kazuhiro Komori, Takeyoshi Sugaya, Toshihide Takagahara(1.National Institute of Advanced Industrial Science and Technology (AIST), 2.CREST, Japan Science and Technology Corporation (JST))
[A-2-4]Exciton Rabi Oscillaton in InAs/GaAs Coupled Quantum Dot
K. Goshima, K. Komori, S. Yamauchi, I. Morohashi, T. Sugaya(1.National Institute of Advanced Industrial Science and Technology (AIST), 2.CREST, Japan Science and Technology Agency (JST))
[A-2-5]Study of Basic Characteristics of Spin - Photodiode Consisting of III ? V p-n Heterojunction
J. Hayafuji, T. Kondo, H. Munekata(1.Imaging Science and Engineering Laboratory, Tokyo Institute of Technology)
[A-2-6]Resonant Terahertz Detection Based on High-electron-mobility Transistor with Schottky Source/Drain Contact
Akira Satou, Victor Ryzhii, Taiichi Otsuji, Michael S. Shur(1.Computer Solid State Physics Laboratory, University of Aizu, 2.Research Institute of Electrical Communication, Tohoku University, 3.Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute)
[A-3-1]New Approach to Experimental Nanomechanics Using MEMS Technology
Yoshitada Isono(1.Department of Micro System Technlogy, Ritsumeikan University)
[A-3-2]CMOS-Compatible Suspended Square Inductors on Silicon Wafers for RF ICs
Chih-Ming Tai, Chien-Neng Liao(1.National Tsing-Hua University, Dept. of Materials Science and Engineering)
[A-3-3]Ultra high aspect ratio sub-micron silicon micromachining by double-passivation deep reactive ion etching
Ranganathan Nagarajan, B. Ramana Murthy(1.Institute of Microelectronics, Semiconductor Process Technology Laboratory)
[A-3-4]Room Temperature Vacuum Sealing with Au Thin Films Using Ar Beam Surface Activation
Hironao Okada, Toshihiro Itoh, Tadatomo Suga(1.Univ. of Tokyo, Dept. of Precision Eng, School of Eng.)
[A-3-5]MEMS Wafer Level Packaging by Using Surface Activated Bonding
Yoshiyuki Takegawa, Toru Baba, Takafumi Okudo, Yuji Suzuki(1.EMIT Devices Development Department, 2.Micro Fabrication Process Development Center, Matsushita Electric Works, Ltd.)
[A-5-1]ZnO nanorods for electronic nanodevice applications
Gyu-Chul Yi, Won Il Park, J. Yoo, H.-J. Kim, C.-H. Lee(1.National CRI Center for Semiconductor Nanorods and Department of Materials Science and Engineering, POSTECH)
[A-5-2]Arrangement of Catalyst Islands at Surface Atomic Steps toward Position Control of Nanowires
H. Hibino, K. Tateno, Y. Watanabe(1.NTT Basic Research Laboratories, NTT Corporation)
[A-5-3]Exciton and biexciton emissions from single GaAs quantum dots in (Al, Ga)As nanowires
Haruki Sanada, Hideki Gotoh, Kouta Tateno, Hidetoshi Nakano(1.NTT Basic Research Laboratories, NTT Corporation)
[A-6-1]Probing carbon nanostructures growth mechanism using an in-situ UHVTEM
Y. L. Foo(1.Institute of Materials Research and Engineering)
[A-6-2]High-Sensitive and Label-Free Detection of Biomolecules Using Single-Walled Carbon Nanotube Modified Microelectrodes
Jun Okuno, Kenzo Maehashi, Kazuhiko Matsumoto, Kagan Kerman, Yuzuru Takamura, Eiichi Tamiya(1.The Institute of Scientific and Industrial Research, Osaka University, 2.School of Materials Science, Japan Advanced Institute of Science and Technology)
[A-6-3]Electric properties of single-walled carbon nanotube film field effect transistors with various work function electrodes: a comparison between pristine and potassium-encapsulated nanotubes
Hideyuki Maki, Satoru Suzuki, Tetsuya Sato, Koji Ishibashi(1.Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, 2.NTT Basic Research Laboratories, NTT Corporation, 3.Advanced Device Laboratory, The Institute of Physical and Chemical Research (RIKEN))
[A-6-4]DNA Aptamer-Based Biosensing of Immunoglobulin E Using Carbon Nanotube Field-Effect Transistors
Taiji Katsura, Kenzo Maehashi, Kazuhiko Matsumoto, Kagan Kerman, Yuzuru Takamura, Eiichi Tamiya(1.The Institute of Scientific and Industrial Research, Osaka University, 2.School of Materials Science, Japan Advanced Institute of Science and Technology)
[A-6-5]Surface Potential Measurement of Carbon Nanotube FETs using Kelvin Probe Force Microscopy
T. Umesaka, H. Ohnaka, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani(1.Department of Quantum Engineering, Nagoya University, 2.PRESTO, Japan Science and Technology Agency, 3.Venture Business Laboratory, Nagoya University, 4.Institute of Advanced Research, Nagoya University)
[A-7-1]Semiconductor Nanowire Devices for Future Logic and Memory (Invited Paper)
B. Yu, M. Meyyappan(1.Center for Nanotechnology, NASA Ames Research Center)
[A-7-2]Charge Polarity Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Charge Transistors
Masaharu Kobayashi, Kousuke Miyaji, Toshiro Hiramoto(1.Institute of Industrial Science, University of Tokyo)
[A-7-3]High-PVCR Si/Si1-xGex Planer-Type Resonant Tunneling Diode Formed with Phosphorous doped Quadruple-layer Buffer
Hirotake Maekawa, Yoshihiro Sano, Yoshiyuki Suda(1.Graduate School of Engineering, Tokyo University of Agriculture and Technology)
[A-7-4]High-Density Floating Nanodots Memory Produced by Cage-Shaped Protein
Kiyohito Yamada, Shigeo Yoshii, Shinya Kumagai, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita(1.Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd., 2.Graduate School of Materials Science, Nara Institute of Science and Technology, 3.Core Research for Evolutional Science and Technology, Japan Science and Technology Agency)
[A-7-5]Tunnel-coupled double nanocrystalline Si quantum dots integrated into a single-electron transistor
Y. Kawata, M. Khalafalla, K. Usami, Y. Tsuchiya, H. Mizuta, S. Oda(1.Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2.SORST-JST (Japan Science and Technology))
[A-8-1]Electrostatic coupling between two double-quantum dots studied by resonant tunneling current
Gou Shinkai, Toshimasa Fujisawa, Toshiaki Hayashi, Yoshiro Hirayama(1.NTT Basic Research Laboratories, NTT Corporation, 2.Department of Physics, Tokyo Institute of Techonology, 3.Department of Physics, Tohoku University, 4.SORST-JST)
[A-8-2]Photo Illumination Effect on Single-Electron-Tunneling Current Through a Thin Bicrystal SOI FET
R. Nuryadi, Z. A. Burhanudin, R. Yamano, T. Ishino, Y. Ishikawa, M. Tabe(1.Research Institute of Electronics, Shizuoka University, 2.Department of Materials Engineering, University of Tokyo)
[A-8-3]Fabrication of Ge Quantum-dots by Oxidation of Si1-xGex-on-insulator Nanowires and its Applications to Resonant Tunneling Diodes and Single-electron/Single-hole Transistors
Wei-Ting Lai, Pei-Wen Li(1.Department of Electrical Engineering, National Central University)
[A-8-4]Observation of single-electron pump operation with one ac gate bias in phosphorous-doped Si wires
D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, R. Nuryadi, H. Ikeda, M. Tabe(1.Research Institute of Electronics, Shizuoka University, 2.NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation.)
[A-8-5]SET-based Flexible Multi-valued NAND and NOR Gates for Half-Adder
C. K. Lee, S. J. Kim, S. J. Choi, J. H. Hwang, R. S. Chung, J. J. Lee, M. S. Kim, S. J. Shin, J. B. Choi, Y. S. Yu, H. W. Kye, B. N. Song(1.Dept. of Physics & Institute for Nano Science & Technology, Chungbuk National University, 2.Dept. of Information & Control Engineering, Hankyong National University, 3.EXCEL Semiconductor Inc.)
[A-8-6]Multi-Functionality of Novel Structured Tunneling Devices
Woo Young Choi, Jae Young Song, Jong Pil Kim, Jong Duk Lee, Byung-Gook Park(1.Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University)
[A-9-1]Organic Molecular Wires
Peter Hadley, Murat Durkut(1.Kavli Institute of NanoScience)
[A-9-2]Possible Non-equilibrium Kondo Effect in a Nanocrystalline Silicon Point-Contact Transistor
M. A. H. Khalafalla, H. Mizuta, S. Oda, Z. A. K. Durrani(1.Quantum Nanoelectronics Research Centre, Tokyo Institute of Technology, 2.Department of Engineering, University of Cambridge)
[A-9-3]Low Temperature Characteristics of Ambipolar SiO2/Si/SiO2 Hall-bar Devices
Kei Takashina, Benjamin Gaillard, Yukinori Ono, Yoshiro Hirayama(1.NTT Basic Research Laboratories, NTT Corporation, 2.SORST-JST)
[A-9-4]Detection of Magnetic Domain Wall in a Permalloy Wire by the Local Hall Effect
Yoshiaki. Sekine, Tatsushi. Akazaki, Junsaku. Nitta(1.NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 2.Graduate School of Engineering, Tohoku University, 3.CREST-JST, Japan Science and Technology Agency)
[A-9-5]A Field-Effect Transistor with a Deposited Graphite Thin Film
Hiroshi Inokawa, Masao Nagase, Shigeru Hirono, Touichiro Goto, Hiroshi Yamaguchi, Keiichi Torimitsu(1.Research Institute of Electronics, Shizuoka University, 2.NTT Basic Research Laboratories, NTT Corporation, 3.NTT Afty Engineering Corporation)
[A-9-6L]Room Temperature Demonstration of Variable Full Width at Half Maximum of Coulomb Oscillation in Silicon Single-Hole Transistor
Kousuke Miyaji, Toshiro Hiramoto(1.Institute of Industrial Science, University of Tokyo)
[B-1-1]Control of Light Emission and Propagation in Semiconductor Photonic Nanostructures
Toshihiko Baba(1.Yokohama National University, Dept. Electr. & Computer Eng.)
[B-1-2]All-Optical Switching and Control of Silicon Photonic Crystal Nanocavities
Masaya Notomi, Eiichi Kuramochi, Takasumi Tanabe, Hideaki Taniyama, Akihiko Shinya(1.NTT Basic Research Laboratories, NTT Corporation)
[B-1-3]Photonic Crystal Nanocavity Continuous-wave Laser Operation at Room Temperature
Masahiro Nomura, Satoshi Iwamoto, Katsuyuki Watanabe, Naoto Kumagai, Yoshiaki Nakata, Satomi Ishida, Yasuhiko Arakawa(1.Institute of Industrial Science, Research Center for Advanced Science and Technology, and Nanoelectronics Collaborative Research Center, University of Tokyo)
[B-1-4]Modified Luminescence from Germanium Self-assembled Quantum Dots in Photonic Crystal Cavity at Room Temperature
Jinsong Xia, Norita Usami, Yuta Ikegami, Yasushi Nakata, Yasuhiro Shiraki(1.Musashi Institute of Technology, Research Center for Silicon Nano-science, 2.Tohoku University, Institute for Materials Research, 3.Horiba, Ltd.)
[B-1-5]Highly Efficient and Stable Photoluminescence of Nanocrystalline Porous Silicon with Fully Annealed and Passivated Surfaces
Bernard Gelloz, Nobuyoshi Koshida(1.Graduate school of Engineering, Tokyo University of Agriculture and Technology, 2.Quantum14 Co.)
[B-2-1]Integrated Photonic Network Node-Chip with Photonic Crystals
Hirohito Yamada, Tao Chu, Akiko Gomyo, Jun Ushida, Satomi Ishida, Yasuhiko Arakawa(1.NEC Corporation, Fundamental and Environmental Research Laboratories, 2.Optoelectronic Industry and Technology Development Association, 3.Univ. of Tokyo, Research Center for Advanced Science and Technology)
[B-2-2]Compact Multi-Mode Optical Ring Resonators for Interconnection on Si Chips
Yuichiro Tanushi, Shin Yokoyama(1.Research Center for Nanodevices and Systems, Hiroshima University)
[B-2-3]Silicon Optical Modulators in Silicon-on-Insulator (SOI) Substrate Based on the p-i-n Waveguide Structure
M. T. Hsu, R. W. Chuang(1.Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center (AOTC), National Cheng Kung University)
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