Session Details
[Mo-P]Epitaxial and Thin-Film Growth
Mon. Sep 28, 2026 1:00 PM - 3:00 PM JST
Mon. Sep 28, 2026 4:00 AM - 6:00 AM UTC
Mon. Sep 28, 2026 4:00 AM - 6:00 AM UTC
Poster-A(1st Floor)
[Mo-P-13]Comparative Study of Warm-Wall Batch and Hot-Wall Single-Wafer Platforms for 4H-SiC Homoepitaxy on 200 mm Wafers for 1200 V Trench-MOSFETs
*Daniel Baierhofer1, Frank Staiger1, Bernd Thomas1, Christian Bierhoff1, Udo Bischof1 (1. Robert Bosch GmbH (Germany))
[Mo-P-14]Thick SiC Epitaxial Layers grown on Engineered Substrates
*Rachael L. Myers-Ward1, Nadeemullah A. Mahadik1, Alec N. Imhof1, Benjamin J. Sekely1, Jenifer R. Hajzus1, Walter Schwarzenbach2, Alexis Drouin2 (1. U.S. Naval Research Laboratory (USA), 2. Soitec (France))
[Mo-P-15]Optimization of Closed Sublimation Growth for Thick and Smooth Fluorescent 4H-SiC Epilayers
*Aoto Hashiguchi1, Ryuya Matsumoto1, Shoki Ohara1, Kyoya Okawa1, Motoaki Iwaya1, Tetsuya Takeuchi1, Atsushi Suzuki2, Eri Akazawa2, Weifang Lu3, Satoshi Kamiyama1 (1. Meijo Univ. (Japan), 2. E&E Evolution Ltd. (Japan), 3. Xiamen Univ. (China))
[Mo-P-16]Alternative Silicon and Carbon Precursors for 4H-SiC Epitaxy
*Maximilian Titl1, Christian Wissgott1, Michael Pfeffer2, Johannes Koehler2, Kevin Albrecht2, Birgit Kallinger1 (1. Fraunhofer Inst. for Integrated Systems and Device Technology IISB (Germany), 2. AIXTRON SE (Germany))
[Mo-P-17]Epitaxial Thickness and Surface Roughness Process Control as Enablers for Zero Defect Automotive SiC Power Devices
*Nicolo Piluso1, Cristiano Calabretta1, Fabiana Vento1, Andrea Severino1, Antonio Rossitto1, Alice Lombardo1, Nicoletta Spampinato1, Antonio Criscuolo1, Simone Rosin1, Anna Martiniello1, Antonio Volzone1, Dmitrii Rusakov2, Sah Kaushik2, Pauline Begoc2, Federico Buja2, Matteo Salamone2, Federico Giuffrida2, Parikshit Sharma2, Paolo Parisi2, Giuseppe Arena1, Salvatore Ethan Panasci3, Marco Zignale3, Patrick Fiorenza3, Fabrizio Roccaforte3 (1. Indus. STmicroelectronics (Italy), 2. Indus. KLA Corporation (USA), 3. CNR-IMM (Italy))
[Mo-P-18]Defect Reduction in 8-inch 4H-SiC Wafers by Integrated Multi-Wafer Dynamic AGE-ing® Etching/Growth Process
*Taizo Fujiwara1, Kohei Toda1, Daichi Dojima1, Hiroshi Mihara1, Tadaaki Kaneko1,2 (1. QureDA Research, Inc. (Japan), 2. Kwansei Gakuin University (Japan))
[Mo-P-19]Comparative Study of Hydrogen Etching Kinetics on Si (0001) and C (000-1) Terminated 4° Off-Cut 4H-SiC
*An Min Amanda Lee1,2, Shiv Kumar1, Eng Soon Tok2, Umesh Chand1, Tanmay Ghosh1, Xuan Sang Nguyen1, Xiao Gong1, Navab Singh1, Yee-Chia Yeo1,3 (1. Inst. of Microelectronics (IME), A*STAR (Singapore), 2. Department of Physics, National Univ. of Singapore (Singapore), 3. Department of Electrical and Computer Eng., National Univ. of Singapore (Singapore))
[Mo-P-20]Towards Thick and Highly p-Doped 4H-SiC Epitaxial Structures
*Marco Mauceri1, Mario Lizzio1, Vincent Lafage1, Chiara Cuccia1, Maria Luisa Alonzo1, Silvio Preti1, Marco Zignale2, Patrick Fiorenza2, Fabrizio Roccaforte2 (1. ASM International (Italy), 2. CNR-IMM (Italy))
[Mo-P-86]Enabling Next Generation High Voltage Power Applications Through Thick 4HSiC Epitaxy
Tawhid Rana1, *Dong Lee1, Taye Tarekegn1, Srujana Prayakarao1, Nadeemullah Mahadik2, Alecsander Imhof2, Shanthi Subramanian1 (1. Coherent Corp. (USA), 2. US Naval Res. Lab. (USA))