Session Details
[23p-A303-1~8]13.3 Insulator technology
Sat. Sep 23, 2023 1:30 PM - 3:30 PM JST
Sat. Sep 23, 2023 4:30 AM - 6:30 AM UTC
Sat. Sep 23, 2023 4:30 AM - 6:30 AM UTC
A303 (KJ Hall)
Keisuke Yamamoto(Kyushu Univ.)
[23p-A303-1]Confirmation of Interface Dipole Modulation in Metal/Al2O3/SnOx/SiO2/Si MOS structures
〇Yoshiharu Kirihara1, Shunichi Ito1, Akira Yasui2, Ryousuke Ishikawa1, Hiroshi Nohira1 (1.Tokyo City Univ., 2.JASRI)
[23p-A303-2]Defect generation and recovery in high-k dielectric stack (HfO2/SiO2/Si) fabrication
〇Shota Nunomura1, Hiroyuki Ota1, Toshifumi Irisawa1, Kazuhiko Endo1, Yukinori Morita1 (1.AIST)
[23p-A303-3]Influences of Post-thermal oxidation and Post-metallization Anneal of Zr/Hf-Multilayer Structures on Crystalline Phases in HfZr Oxide Layers
〇(M2)Yunosuke Sano1, Noriyuki Taoka2, Akio Ohta3, Katsunori Makihara1, Seiichi Miyazaki1 (1.Nagoya Univ., 2.Aichi Inst. Tech., 3.Fukuoka Univ.)
[23p-A303-4]Evaluation of GeO2 film by annealing treatment
〇Yuta Tsuchiya1, Hazime Saito1, Yoshitaka Iwasaki1, Tomo Ueno1 (1.Tokyo Univ. of Agri and Tech)
[23p-A303-5]Preparation and evaluation of GeO2 film by two-step oxidation
〇Hajime Saito1, Yuta Tsuchiya1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.TUAT)
[23p-A303-6]Variation of GeO2/Ge interface properties with annealing time of Cu-PMA method
〇Kota Kanno1, Youta Uchida1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Noukou Univ.)
[23p-A303-7]Study of solution oxidation of Ge substrates
〇Gen Shimizu1, Yuta Tsuchiya1, Hoshiki Harata1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo univ. of Agri & Tech)
[23p-A303-8]Study of water resistance of GeO2 films
〇(M1)Keita Ishizuka1, Takumi Suzuki1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo univ. of Agri & Tech.)