[A-0-1]Recent Progress in Magnetic Bubble Devices and Materials
Hsu Chang(1.IBM, Thomas J. Watson Research Center)
1975 Conference on Solid State Devices
Sep 1 - Sep 2, 1975The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
You can search for presentations in this event.
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1975 Conference on Solid State Devices
Sep 1 - Sep 2, 1975The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
You can search for presentations in this event.
SearchSearch Results(52)
[A-1-1]A New Chemical Dry Etching
Y. Horiike, M. Shibagaki(1.Toshiba Research and Development Center Tokyo Shibaura Electric Co., Ltd.)
[A-1-2]MICROFABRICATION TECHNIQUE BY GAS PLASMA ETCHING METHOD
H. KOMIYA, H. TOYODA, T. KATO, K. INABA(1.Central Research Lab., Mitsubishi Electric Corp.)
[A-1-3]Microfabrication of Anti-Reflective Chromium Mask by Gas Plasmas
Haruhiko ABE, Kyusaku NISHIOKA, Setsuko TAMURA, Akira NISHIMOTO(1.Central Research Laboratories, Mitsubishi Electric Corp., 2.Kitaitami Works, Mitsubishi Electric Corp.)
[A-2-1]Semi-Insulating Polycrystalline-Silicon (SIPOS) Passivation Technology
T. Matsushita, T. Aoki, T. Otsu, H. Yamoto, H. Hayashi, M. Okayama, Y. Kawana(1.SONY Corporation, Atsugi Plant)
[A-2-2]SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) FILMS APPLIED TO MOS INTEGRATED CIRCUITS
H. Yamoto, M. Okayama, T. Aoki, H. Mochizuki, M. Abe, T. Ando(1.SONY Corp. Semiconductor Product Div. and Semiconductor Development Div. Atsugi Plant)
[A-2-3]Application of Diffusion from Implanted Polysilicon to Bipolar Transistors
Y. AKASAKA, K. TSUKAMOTO, M. KAWAGUCHI, H. SATO, K. HORIE, H. KOMIYA(1.Central Research Laboratory, Kitaitami Works, Mitsubishi Electric Corp.)
[A-3-1]Low Temperature Annealing Characteristics of Phoshorus-Implanted Silicon
M. Miyao, N. Natsuaki, N. Yoshihiro, M. Tamura, T. Tokuyama(1.Central Research Laboratory, Hitachi Ltd.)
[A-3-2]Micro-probe Auger Analysis of Si Migration in Al Metallization for LSI
T. Inoue, S. Horiuchi, H. Shimizu, T. Ishida(1.Toshiba R & D Center, Electrotechnical Lab. Nippon Electric Varian Co.)
[A-3-3]Some Applications of Ion Microprobe Analysis to Problems in Semiconductor Devices
Hiroshi Doi, Ichiro Kanomata(1.Central Research Laboratory, Hitachi Ltd.)
[B-1-1]EPITAXIAL GROWTH OF GARNET FILMS FOR BUBBLE MEMORY DEVICES
Y. Nakayama, Y. Watanabe(1.Matsushita Research Institute Tokyo, Inc.)
[B-1-2]ANOMALOUS HALL EFFECT AND OPTICAL KERR EFFECT IN RARE EARTH COBALT SYSTEMS
Akio OGAWA, Toshikazu KATAYAMA, Masahiro HIRANO, Tachiro TSUSHIMA(1.Electrotechnical Laboratory)
[B-1-3]Anomalous Magneto-optical Hysteresis Loops of Sputtered Gd-Co Films
Sotaro Esho(1.Central Research Laboratories, Nippon Electric Co., Ltd.)
[B-2-1]MAGNETIC WALL MOBILITY OF STRIP DOMAIN IN GARNET CRYSTAL
Y. Okabe, T. Toyooka, M. Takigawa, T. Sugano(1.Dept. of Elec. Engrg., Fac. of Engrg., Univ. of Tokyo)
[B-2-2]10 kbit Bubble Memory Chip, Design and Fabrication
S. Orihara, S. Matsuyama, S. Sakai(1.Fujitsu Laboratories Ltd.)
[B-2-3]DESIGN AND EVALUATION OF 64K-BIT MAGNETIC BUBBLE MEMORY CHIP
M. Hiroshima, A. Asano, S. Yoshizawa, N. Saito, M. Kasai(1.Central Research Laboratory, Hitachi, Ltd.)
[B-3-1]LIQUID-CRYSTAL ELECTROTHERMO-OPTIC EFFECTS AND THEIR APPLICATION TO DISPLAY
Akio SASAKI, Takayuki MORIOKA, Toshinori TAKAGI, Toyotsugu ISHIBASHI(1.Department of Electronics, Kyoto University)
[B-3-2]Photochemical Display - a New Type of Display Device -
Shuichi Fukuda, Fujio Saito, Masao Miya(1.Central Research Laboratories, Nippon Electric Co., Ltd.)
[B-3-3]PLZT Application to Image Display Devices
A. Kumada, K. Suzuki, K. Kitta, G. Toda(1.Central Research Laboratory, Hitachi, Ltd.)
[E-1-1]MAGNETIC BUBBLE AND ITS COMPETING TECHNOLOGIES
OSAMU ISHII(1.Electrotechnical Laboratory)
[E-1-2]PROBLEMS ON HIGH SPEED BUBBLE DEVICES
Takashi FURUOYA(1.Central Research Laboratories, Nippon Electric Co., Ltd.)
[E-1-3]Some Approaches to High Density Bubble Memory Chips
Gen-ichi Kamoshita, Yutaka Sugita(1.Central Research Laboratory, Hitachi, Ltd.)
[E-1-4]Consideration on Bubble Memory as Practical Device
K. Yamagishi(1.FUJITSU LABORATORIES LTD.)
[A-4-1]GaAs X-BAND POWER FET
M. Fukuta, K. Suyama, N. Yokoyama, H. Ishikawa(1.Fujitsu Laboratories Ltd.)
[A-4-2]A New Heterojunction-Gate GaAs FET
S. Umebachi, K. Asahi, A. Nagashima, M. Inoue, G. Kano(1.Research Laboratory, Matsushita Electronics Corp.)
[A-4-3]Two-dimensional Analysis of Vertical Junction-Gate FET's
Ken YAMAGUCHI, Toru TOYABE, Hiroshi KODERA(1.Central Research Laboratory, Hitachi, Ltd.)
[A-5-1]Multi-Channel FET with A New Diffusion Type Structure
Osamu Ozawa, Kiyoshi Aoki(1.Toshiba Research and Development Center)
[A-5-2]A High Power MOSFET with a Vertical Drain Electrode and Meshed Gate Structure
I. Yoshida, M. Kubo, S. Ochi(1.Central Research Laboratory, Hitachi Ltd.)
[A-5-3]A 256-b Nonvolatile Static Random-Access Memory with MNOS memory transistors
S. Saito, N. Endo, Y. Uchida, T. Tanaka, Y. Nishi, K. Tamaru(1.Toshiba R & D Center, Tokyo Shibaura Electric Co., Ltd.)
[A-6-1]Short Channel MOS-IC Based on Accurate Two Dimensional Device Design
R. Hori, H. Masuda, O. Minato, S. Nishimatsu, K. Sato, M. Kubo(1.Central Research Laboratory, Hitachi Ltd.)
[A-6-2]Short Channel, Low Noise UHF MOSFET's Utilizing Molybdenum-Gate Masked Ion-Implantation
T. OKABE, S. OCHI, H. KURONO, J. KAGAMI(1.Central Research Laboratory, Hitachi Ltd.)
[A-6-3]VARIABLE DISTRIBUTION PARAMETER FIELD EFFECT DEVICES
Takaaki Yamada, Makoto Hirabayashi, Shuichi Sato, Makoto Kikuchi(1.Semiconductor Development Division and Research Center SONY Corporation)
[A-7-1]THIN FILM EVALUATION TECHNIQUES FOR THE ESFI SOS TECHNOLOGY
M. Druminski, Ch. Kuhl, E. Preuss, F. Schwidefsky, H. Splittgerber, D. Takacs(1.Siemens AG, Research Laboratories)
[A-7-2]THRESHOLD VOLTAGE ENGINEERING WITH ESFI SOS MOST'S
H. Schlotterer(1.Siemens AG, Research Laboratories)
[A-7-3]Effects of Crystalline Defects on Electrical Properties in Silicon Films on Sapphire
S. Onga, T. Yoshii, K. Hatanaka, Y. Yasuda(1.Toshiba R and D Center, Tokyo Shibaura Electric Co., Ltd., 2.Faculty of Science, Gakushuin University)
[A-7-4]Magnetoresistance and the electronic structure of Si on sapphire
Y. Ohmura(1.Toshiba R & D Center, Tokyo Shibaura Electric Co., Ltd.)
[B-4-1]228 by 248 Cells Charge Coupled Image Sensor with Two-Level Overlapping Poly-Silicon Electrodes
Hiroshi Tanigawa, Yasuo Ishihara, Yasuaki Hokari, Tsutomu Ishihara, Hiromitsu Shiraki(1.Central Research Laboratories, Nippon Electric Company)
[B-4-2]Application of Plasma Coupled Device to Solid State Image Sensors
T. Shibata, H. Kodama, Y. Yamamoto, K. Yano(1.Musashino Electrical Communication Laboratory Nippon Telegraph and Telephone Public Corporation)
[B-4-3]A New Type of Transistor with Application for High Sensitive Imaging
Y. Yamamoto(1.Musashino Electrical Communication Laboratory Nippon Telegraph and Telephone Public Corporation)
[B-5-1]Epitaxial GaAs Hall Sensors for High Temperature Applications
Akimichi Hojo, Shikei Tanaka, Isamu Kuru(1.Toshiba R & D Center)
[B-5-2]High-Purity CdTe and Its Application to Radiation Detectors
Tsunemasa Taguchi, Junji Shirafuji, Yoshio Inuishi, Tetsuji Kobayashi(1.Department of Electrical Engineering, Faculty of Engineering, Osaka University, 2.Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.)
[B-5-3]LIGHT ACTIVATED HIGH POWER BI-DIRECTIONAL THYRISTORS
T. Yatsuo, N. Konishi, Y. Sugawara, T. Kamei, M. Okamura(1.Hitachi Research Laboratory, Hitachi, Ltd.)
[B-6-1]NOVEL OPTICAL METHODS FOR HIGH SPEED DIRECT MODULATION OF SEMICONDUCTOR LASERS
Kohroh KOBAYASHI, Roy LANG, Koichi MINEMURA(1.Central Research Laboratories, Nippon Electric Company, Limited)
[B-6-2]Reduction of the Threshold Current of Buried-Heterostructure Injection Lasers into the mA Range
Toshihisa TSUKADA, Kazutoshi SAITO, Noriyuki SHIGE, Yasuji SHIMA(1.Central Research Laboratory, Hitachi, Ltd.)
[B-6-3]Monolithic Passivated Stripe-Geometry Double Heterostructure Injection Lasers
Y. Tarui, Y. Komiya, T. Sakamoto, H. Iida, A. Shoji(1.Electrotechnical Laboratory)
[B-7-1]X-Ray Topographic Study of Lattice Defects Related with Degradation of GaAs-Ga1-xAlxAs Double Heterostructure Lasers
S. Kishino, H. Nakashima, R. Ito, O. Nakada, M. Maki(1.Central Research Laboratory, Hitachi Ltd.)
[B-7-2]A NEW TWO-DIMENSIONAL DFB LASER WITH DISTRIBUTED BRAGG AND ACOUSTO-OPTIC REFLECTORS
M. Yamanishi, T. Minami, T. Kawamura(1.Department of Electrical Engineering, University of Osaka Prefecture)
[B-7-3]Room Temperature Operation of Distributed Feedback Diode Laser with Separate Optical and Carrier Confinement
Jun-ichi UMEDA, Michiharu NAKAMURA, Kunio AIKI(1.Central Research Laboratory, Hitachi Ltd.)
[B-7-4]Integrated Photodetector Using the Partially Metal-Clad-Dielectric-Slab Waveguide Structure
Joji Hamasaki, Kiyoshi Nosu, Hiroyuki Sakai(1.Institute of Industrial Science, University of Tokyo)
[E-2-1]Physical and Technological Limits in Size of Semiconductor Devices
Takuo Sugano(1.Department of Electronic Engineering, the University of Tokyo)
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