The 85th JSAP Autumn Meeting 2024
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Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[16p-A21-1~14]15.4 III-V-group nitride crystals

Mon. Sep 16, 2024 1:00 PM - 5:00 PM JST
Mon. Sep 16, 2024 4:00 AM - 8:00 AM UTC
A21 (TOKI MESSE 2F)
Kazunobu Kojima(Osaka Univ.), Kazuyoshi Iida(豊田合成), Hamaguchi Tatsushi(Mie Univ.)
1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[16p-A21-1]Optical fiber approximation of GaN-based VCSEL with monolithic curved mirror

〇Kazuki Ohnishi1, Naoki Higuchi1,2, Masayoshi Cho1,2, Masatoshi Tamaru1,2, Tatsushi Hamaguchi1,3 (1.iCSDF, Mie Univ., 2.Faculty of Eng., Mie Univ., 3.Graduate School of Eng., Mie Univ.)
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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A21-2]In-plane distribution of resonance and emission wavelengths in GaN-based vertical-cavity surface-emitting lasers

〇Naoki Shibahara1, Mitsuki Yanagawa1, Taichi Nishikawa1, Shoki Arakawa1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1 (1.Meijo Univ.)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A21-3]Investigation towards low threshold current density and precise emission wavelength control in VCSELs with GaInN MQWs

〇Shoki Arakawa1, Taichi Nishikawa1, Mitsuki Yanagawa1, Naoki Shibahara1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1, Kentaro Nonaka2, Yoshitaka Kuraoka2, Takashi Yoshino2 (1.Meijo Univ., 2.NGK Insulators,LTD)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[16p-A21-4]Proposal and prototype of high reflective DBRs loaded membrane InGaN based laser structure.

〇Shuya Sato1, Yuki Takahashi1, Akihiko Kikuchi1,2 (1.Sophia Univ., 2.Sophia Semiconductor Research Inst.)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[16p-A21-5]Homoepitaxial Growth on a-plane AlN Template by HVPE

〇Shunki Ito1, Ryota Akaike1,2, Hiroki Yasunaga2,3, Takao Nakamura1,2,3, Hideto Miyake1,2 (1.Mie Univ., 2.IC-SDF, 3.ORIP)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A21-6]Fabrication of AlGaN-based UV-B laser diodes with refractive-index waveguide structure

〇Rintaro Miyake1, Yoshinori Imoto1, Ryoya Yamada1, Takumu Saito1, Shundai Maruyama1, Shogo Karino1, Yusuke Sasaki1, Sho Iwayama1, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Hideto Miyake2 (1.Meijo Univ., 2.Mie Univ.)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[16p-A21-7]UV laser diode structure using n-type AlN/AlGaN superlattice cladding layer

〇Kazuaki Ebata1, Kouta Tateno1, Kazuyuki Hirama1, Kazuhide Kumakura1, Yoshitaka Taniyasu1 (1.NTT BRL)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A21-8]Fabrication of vertical UV-B laser diodes using a substrate exfoliation technique with pressurized and heated water

〇YUSUKE SASAKI1, Yoshinori Imoto1, Ryoya Yamada1, Takumu Saito1, Rintaro Miyake1, Shundai Maruyama1, Shogo Karino1, Sho Iwayama1, Motoaki Iwaya1, Tetuya Takeuchi1, Satoshi Kamiyama1, Hideto Miyake2 (1.Meijo Univ., 2.Mie Univ.)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A21-9]Fabrication of thin film LEDs using sapphire substrate exfoliation technique by pressurized heated water

〇Shogo Karino1, Yoshinori Imoto1, Ryoya Yamada1, Takumu Saito1, Rintaro Miyake1, Yusuke Sasaki1, Shundai Maruyama1, Sho Iwayama1, Hideto Miyake2, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1 (1.Meijo Univ., 2.Mie Univ.)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[16p-A21-10]Device performance with sharp heterojunction interface applied in AlGaN-based UV-B LDs

〇Takumu Saito1, Rintaro Miyake1, Ryoya Yamada1, Yoshinori Imoto1, Shundai Maruyama1, Yusuke Sasaki1, Shogo Karino1, Sho Iwayama1, Hideto Miyake2, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.Meijo Univ., 2.Mie Univ.)
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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A21-11]Electron Beam-Excited Light Source Emitting at 230 nm Using AlGaN/AlN Multiple Quantum Wells

〇Ryoya Iwase1, Ryota Akaike1,2, Hiroki Yasunaga2,3, Takao Nakamura1,2,3, Masayoshi Nagao4, Katsuhisa Murakami4, Hideto Miyake1,2 (1.Gra. Sch. of Eng. Mie Univ, 2.IC-SDF Mie Univ, 3.OPRI Mie Univ, 4.Dev. Tch. Res. Inst. AIST.)
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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[16p-A21-12]Observation of medium- and long-term degradation in UV-C LEDs

〇Yoshio Honda1, Yuta Furusawa1, Atsushi Tanaka1, Ryoko Tsukamoto1, Atsushi Miyazaki2, Shinya Boyama2, Koji Okuno2, Yoshiki Saito2, Kohei Shima3, Shigefusa Chichibu3, Hisanori Ishiguro4, Testuya Takeuchi4, Maki Kushimoto1, Hiroshi Amano1 (1.Nagoya Univ., 2.Toyoda Gosei, 3.Tohoku Univ., 4.Meijo Univ.)
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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A21-13]Improvement of 230nm AlGaN far-UVC LED with polarization doping layer

〇(M1)Kohei Fujimoto1,2, Mitsuhiro Muta3, Ajmal Khan1, Sachie Fujikawa1,2, Hiroyuki Yaguchi2, Yasushi Iwaisako3, Hideki Hirayama1 (1.RIKEN, 2.Saitama Univ., 3.Nippon Tungsten)
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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)English Presentation

[16p-A21-14]Revisiting the Growth Temperature Dependence of n-AlGaN Buffer Layer and Quantum-Well in (228-230 nm)-Band far-UVC LEDs

〇Muhammad Ajmal Khan1, Mitsuhiro Muta2, Kohei Fujimoto1,3, Yuya Nagata1,3, Yukio Kashima1, Eriko Matsuura1, Sachie Fujikawa3, Hiroyuki Yaguchi3, Yasushi Iwaisako2, Hideki Hirayama1 (1.RIKEN, 2.Nippon Tungsten Co., Ltd. Japan, 3.Saitama University)
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