[16p-A21-1~14] 15.4 III-V-group nitride crystals | The 85th JSAP Autumn Meeting 2024

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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[16p-A21-1~14]15.4 III-V-group nitride crystals

Mon. Sep 16, 2024 1:00 PM - 5:00 PM JST
Mon. Sep 16, 2024 4:00 AM - 8:00 AM UTC

A21 (TOKI MESSE 2F)

Kazunobu Kojima(Osaka Univ.), Kazuyoshi Iida(豊田合成), Hamaguchi Tatsushi(Mie Univ.)

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1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[16p-A21-1]Optical fiber approximation of GaN-based VCSEL with monolithic curved mirror

〇Kazuki Ohnishi¹, Naoki Higuchi^1,2, Masayoshi Cho^1,2, Masatoshi Tamaru^1,2, Tatsushi Hamaguchi^1,3 (1.iCSDF, Mie Univ., 2.Faculty of Eng., Mie Univ., 3.Graduate School of Eng., Mie Univ.)

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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A21-2]In-plane distribution of resonance and emission wavelengths in GaN-based vertical-cavity surface-emitting lasers

〇Naoki Shibahara¹, Mitsuki Yanagawa¹, Taichi Nishikawa¹, Shoki Arakawa¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1.Meijo Univ.)

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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A21-3]Investigation towards low threshold current density and precise emission wavelength control in VCSELs with GaInN MQWs

〇Shoki Arakawa¹, Taichi Nishikawa¹, Mitsuki Yanagawa¹, Naoki Shibahara¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Kentaro Nonaka², Yoshitaka Kuraoka², Takashi Yoshino² (1.Meijo Univ., 2.NGK Insulators,LTD)

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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[16p-A21-4]Proposal and prototype of high reflective DBRs loaded membrane InGaN based laser structure.

〇Shuya Sato¹, Yuki Takahashi¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Semiconductor Research Inst.)

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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[16p-A21-5]Homoepitaxial Growth on a-plane AlN Template by HVPE

〇Shunki Ito¹, Ryota Akaike^1,2, Hiroki Yasunaga^2,3, Takao Nakamura^1,2,3, Hideto Miyake^1,2 (1.Mie Univ., 2.IC-SDF, 3.ORIP)

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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A21-6]Fabrication of AlGaN-based UV-B laser diodes with refractive-index waveguide structure

〇Rintaro Miyake¹, Yoshinori Imoto¹, Ryoya Yamada¹, Takumu Saito¹, Shundai Maruyama¹, Shogo Karino¹, Yusuke Sasaki¹, Sho Iwayama¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ.)

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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[16p-A21-7]UV laser diode structure using n-type AlN/AlGaN superlattice cladding layer

〇Kazuaki Ebata¹, Kouta Tateno¹, Kazuyuki Hirama¹, Kazuhide Kumakura¹, Yoshitaka Taniyasu¹ (1.NTT BRL)

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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A21-8]Fabrication of vertical UV-B laser diodes using a substrate exfoliation technique with pressurized and heated water

〇YUSUKE SASAKI¹, Yoshinori Imoto¹, Ryoya Yamada¹, Takumu Saito¹, Rintaro Miyake¹, Shundai Maruyama¹, Shogo Karino¹, Sho Iwayama¹, Motoaki Iwaya¹, Tetuya Takeuchi¹, Satoshi Kamiyama¹, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ.)

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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A21-9]Fabrication of thin film LEDs using sapphire substrate exfoliation technique by pressurized heated water

〇Shogo Karino¹, Yoshinori Imoto¹, Ryoya Yamada¹, Takumu Saito¹, Rintaro Miyake¹, Yusuke Sasaki¹, Shundai Maruyama¹, Sho Iwayama¹, Hideto Miyake², Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[16p-A21-10]Device performance with sharp heterojunction interface applied in AlGaN-based UV-B LDs

〇Takumu Saito¹, Rintaro Miyake¹, Ryoya Yamada¹, Yoshinori Imoto¹, Shundai Maruyama¹, Yusuke Sasaki¹, Shogo Karino¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A21-11]Electron Beam-Excited Light Source Emitting at 230 nm Using AlGaN/AlN Multiple Quantum Wells

〇Ryoya Iwase¹, Ryota Akaike^1,2, Hiroki Yasunaga^2,3, Takao Nakamura^1,2,3, Masayoshi Nagao⁴, Katsuhisa Murakami⁴, Hideto Miyake^1,2 (1.Gra. Sch. of Eng. Mie Univ, 2.IC-SDF Mie Univ, 3.OPRI Mie Univ, 4.Dev. Tch. Res. Inst. AIST.)

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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[16p-A21-12]Observation of medium- and long-term degradation in UV-C LEDs

〇Yoshio Honda¹, Yuta Furusawa¹, Atsushi Tanaka¹, Ryoko Tsukamoto¹, Atsushi Miyazaki², Shinya Boyama², Koji Okuno², Yoshiki Saito², Kohei Shima³, Shigefusa Chichibu³, Hisanori Ishiguro⁴, Testuya Takeuchi⁴, Maki Kushimoto¹, Hiroshi Amano¹ (1.Nagoya Univ., 2.Toyoda Gosei, 3.Tohoku Univ., 4.Meijo Univ.)

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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A21-13]Improvement of 230nm AlGaN far-UVC LED with polarization doping layer

〇(M1)Kohei Fujimoto^1,2, Mitsuhiro Muta³, Ajmal Khan¹, Sachie Fujikawa^1,2, Hiroyuki Yaguchi², Yasushi Iwaisako³, Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ., 3.Nippon Tungsten)

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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)English Presentation

[16p-A21-14]Revisiting the Growth Temperature Dependence of n-AlGaN Buffer Layer and Quantum-Well in (228-230 nm)-Band far-UVC LEDs

〇Muhammad Ajmal Khan¹, Mitsuhiro Muta², Kohei Fujimoto^1,3, Yuya Nagata^1,3, Yukio Kashima¹, Eriko Matsuura¹, Sachie Fujikawa³, Hiroyuki Yaguchi³, Yasushi Iwaisako², Hideki Hirayama¹ (1.RIKEN, 2.Nippon Tungsten Co., Ltd. Japan, 3.Saitama University)

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