[A-0-1]A LSI FACTORY OF THE NEW AGE
P. WANG(1.TEXAS INSTRUMENTS INCORPORATED)
1977 Conference on Solid State Devices
Aug 30 - Aug 31, 1977The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
You can search for presentations in this event.
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1977 Conference on Solid State Devices
Aug 30 - Aug 31, 1977The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
You can search for presentations in this event.
SearchSearch Results(58)
[A-1-1]Direct Electron Beam Writing of Devices and Circuits on Silicon
L. D. Yau, L. R. Thibault(1.Bell Laboratories)
[A-1-2]X-ray replication of masks by Synchrotron Radiation of INS-ES
T. Nishimura, H. Kotani, S. Matsui, O. Nakagawa, H. Aritome, S. Namba(1.Faculty of Engineering Science Osaka University)
[A-1-3]A Subnanosecond Masterslice LSI using Dielectric Isolation and Three Layer Metallization Technologies
Tsunehachi Ishitani, Hideo Kodama, Tsuneta Sudo(1.Musashino Electrical Communication Laboratory / Nippon Tel.-Tel. Public Corp.)
[A-2-1]Physics and Device Technology of Silicon on Sapphire
Yoshio Nishi, Hisashi Hara(1.Toshiba Research and Development Center Tokyo Shibaura Electric Co., Ltd.)
[A-2-2]A NEW MOS PROCESS USING MoSi2 AS A GATE MATERIAL
T. Mochizuki, K. Shibata, T. Inoue, K. Ohuchi(1.Toshiba Reseach and Development Center Tokyo Shibaura Electric Co., Ltd.)
[A-2-3]Photocurrent-driven B-MOS Without External Power Supply
Tohru Nakamura, Toshiaki Masuhara, Shojiro Asai(1.Central Research Laboratory, Hitachi, Ltd.)
[A-2-4]A DSA-type Non-Volatile Memory Transistor with Self-Aligned Gates
Masanori Kikuchi, Shuichi Ohya, Machio Yamagishi(1.IC Division, Nippon Electric Company Ltd.)
[A-3-1]A 64K MOS RAM Design
N. Ieda, E. Arai, K. Kiuchi, Y. Ohmori, K. Takeya(1.Electrical Communication Laboratories, Nippon Telegraph and Telephone Public Corporation)
[A-3-2]High Performance 4k Dynamic RAM Fabricated with Short Channel MOS Technology
O. Minato, T. Sasaki, R. Hori, M. Kubo, N. Hashimoto, H. Yoshimura(1.Central Research Laboratory, Hitachi Ltd.)
[A-3-3]High Speed 4K Static RAM using DSAMOST's
K. Takahashi, M. Morimoto, K. Yamada, H. Muta, N. Kawamura H. Ikejima, S. Shirakawa, K. Kobayashi, S. Matsue(1.Central Research Labs., IC Division, Nippon Electric Co., Ltd.)
[B-1-1]Properties of Heteroepitaxial InxGa1-xAs by Molecular Beam Epitaxy
S. Hiyamizu, T. Fujii, K. Nanbu, S. Maekawa(1.Fujitsu Laboratories Ltd.)
[B-1-2]Contents of Non-Radiative Deep Levels and its Relation to Crystallographic Quality
J. Nishizawa, Y. Okuno, K. Nishidori, M. Fujii(1.Research Institute of Electrical Communication, Tohoku University, 2.Semiconductor Research Institute)
[B-1-3]Cathodoluminescence around Dislocations in an LEC-GaP Crystal
Michio Tajima, Yasumasa Okada, Yozo Tokumaru(1.Electrotechnical Laboratory)
[B-1-4]X-Ray Characterization of Single Crystals for Devices with Multiple Crystal Arrangement
K. KOHRA, M. ANDO, T. MATSUSHITA(1.Department of Applied Physics, Faculty of Engineering, University of Tokyo)
[B-2-1]Mirror Type Optical Switch
H. Naitoh, K. Muto, T. Nakayama(1.Central Research Laboratory, Mitsubishi Electric Corporation)
[B-2-2]Phase-matched Electro-optic Light Modulator
M. Kondo, Y. Ohta, M. Sakaguchi(1.Central Research Laboratories, Nippon Electric Co., Ltd.)
[B-2-3]Fourier Transform Optical Imaging Using SAW Memory-Correlator
S. Takada, H. Hayakawa(1.Electrotechnical Laboratory)
[B-3-1]Analysis of Two-Dimensional Etching Effect on the Profiles of Fine Holographic Grating Made of Positive Photoresist AZ2400
K. Kodate, T. Kamiya, H. Takenaka, H. Yanai(1.Physics Laboratory, Japan Women's University, 2.Department of Electronic Engineering, University of Tokyo)
[B-3-2]MECHANISM OF INHERENT MEMORY IN THIN FILM EL DEVICE
M. YOSHIDA, Y. KAKIHARA, T. YAMASHITA, K. TANIGUCHI, T. INOGUCHE(1.CENTRAL RESEARCH LABORATORY, SHARP CORPORATION)
[B-3-3]A Contact Type Linear Photosensor Array Using An Amorphous Thin Film
Hideaki Yamamoto, Makoto Matsui, Toshihisa Tsukada, Yoshizumi Eto, Tadaaki Hirai, Eiichi Maruyama(1.Central Research Laboratory, Hitachi, Ltd.)
[C-1-1]C-Band 10 W Power GaAs MESFET With An Internal Matching Circuit
H. Suzuki, K. Suyama, K. Odani, M. Fukuta(1.Fujitsu Laboratories Ltd.)
[C-1-2]X-and Ku-band Performance of Submicron Gate GaAs Power FETs
Y. Aono, A. Higashisaka, T. Ogawa, F. Hasegawa(1.Central Research Laboratories, Nippon Electric Co. Ltd.)
[C-1-3]Plasma-Grown Oxide Gate GaAs Deep Depletion MOSFET
T. Mimura, N. Yokoyama, Y. Nakayama, N. Fukuta(1.Fujitsu Laboratories Ltd.)
[C-2-1]THEORY FOR ELECTRON MOBILITY IN TERNARY MIXED SEMICONDUCTORS
Akio Sasaki(1.Department of Electrical Engineering, Kyoto University)
[C-2-2]200 GHz Tunnett Diodes
J. Nishizawa, K. Motoya, Y. Okuno(1.Research Institute of Electrical Communication, Tohoku University, 2.Semiconductor Research Institute)
[C-2-3]400 GHz Band Operation of Cooled Silicon IMPATT Diodes
T. Ishibashi, M. Ino, T. Makimura, M. Ohmori(1.Musashino Electrical Communication Laboratory, NTT)
[C-2-4]High Performance Ni-Pd/GaAs Schottky Barrier Diodes
A. Nara, H. Kondo, T. Ishii, H. Ikegawa(1.Central Research Labs., Mitsubishi Electric Co.)
[A-4-1]Arsenic Implanted Emitter and Its Application to UHF Power Transistor
K. Tsukamoto, Y. Akasaka, Y. Watari, Y. Kusano, Y. Hirose, G. Nakamura(1.LSI Development Laboratory, Kita-Itami Works, Mitsubishi Electric Corp.)
[A-4-2]Effects of High Dose Rate Phosphorus Implantation into Silicon
M. Tamura, K. Yagi, N. Sakudo, K. Tokiguchi, T. Tokuyama(1.Central Research Laboratory, Hitachi Ltd.)
[A-4-3]Interfacial Doping by Recoil Implantation for Nonvolatile Memories
T. Ito, S. Hijiya, H. Nishi, M. Shinoda, T. Furuya(1.FUJITSU LABORATORIES LTD.)
[A-5-1]MFS FET - A New Type of Nonvolatile Memory Switch Using PLZT Film
Y. Higuma, Y. Matsui, M. Okuyama, T. Nakagawa, Y. Hamakawa(1.Faculty of Engineering Science, Osaka University, 2.Faculty of Engineering, Setsunan University)
[A-5-2]LOW TEMPERATURE SILICON NITRIDE DEPOSITION USING MICROWAVE-EXCITED ACTIVE NITROGEN
M. Shibagaki, Y. Horiike, T. Yamazaki(1.Toshiba Research and Development Center Tokyo Shibaura Electric Co., Ltd.)
[A-5-3]Suppression of Oxidation-Induced Stacking Faults Formation in Silicon by High Pressure Steam Oxidation
N. Tsubouchi, H. Miyoshi, H. Abe(1.LSI Development Laboratory, Mitsubishi Electric Corp., 2.Computer Development Laboratories Limited)
[A-6-1]Static Induction Transistor Logic
Jun-ichi Nishizawa(1.Research Institute of Electrical Communication, Tohoku University)
[A-6-2]1 GHz 20 W STATIC INDUCTION TRANSISTOR
Y. Yukimoto, Y. Kajiwara, G. Nakamura, M. Aiga(1.Kita-Itami Works, Mitsubishi Electric Corporation)
[A-6-3]A Depleted Base Transistor
Hiroshi Iwasaki, Osamu Ozawa, Yoshitaka Sasaki(1.Toshiba Research and Development Center)
[A-7-1]A TWO PHASE CCD STRUCTURE WITH NARROW-CHANNEL TRANSFER REGIONS
Yoshiaki Daimon-Hagiwara(1.Sony Corporation Research Center)
[A-7-2]A NEW MULTI-LEVEL STORAGE STRUCTURE FOR HIGH DENSITY CCD MEMORY
M. Yamada, K. Fujishima, K. Nagasawa, Y. Gamou(1.LSI Development Laboratory, Mitsubishi Electric Corporation)
[A-7-3]BUBBLE STRETCH PROPERTIES ON CHEVRON PATTERNS
Yasuharu Hidaka, Nobuya Yoshioka(1.Central Research Laboratories, Circuit Components Division, Nippon Electric Co., Ltd.)
[A-7-4]High Power Gate Turn-Off Thyristors
M. Azuma, A. Nakagawa, K. Takigami(1.Toshiba Research and Development Center)
[A-8-1]Merging Technologies: Bipolar and MOS
Douglas Ritchie, Shuichi Sato(1.Tektronix Laboratories, Tektronix, Inc.)
[A-8-2]NEW IC PROCESS TECHNOLOGY
Shuichi Sato, Tadanori Yamaguchi, Douglas Ritchie, Karen Seaward, Jack Sachitano, Peter Burke(1.Tektronix Laboratories, Tektronix, Inc., 2.Emdex, A Division of Exxon Enterprises, Inc.)
[B-4-1]Theoretical Analysis of a Novel MPN GaAs Schottky Barrier Solar Cell
S. S. Li(1.University of Florida)
[B-4-2]MIS Silicon Solar Cells
M. A. Green, R. B. Godfrey, L. W. Davies(1.School of Electrical Engineering, University of New South Wales)
[B-4-3]PHOTOVOLTAIC PROPERTIES OF DISCHARGE-PRODUCED AMORPHOUS SILICON
C. R. Wronski(1.RCA Laboratories)
[B-5-1]Polycrystalline Solar Cells on Metallurgical-Grade Silicon Substrates
T. Warabisako, T. Saitoh, H. Itoh, N. Nakamura, T. Tokuyama(1.Central Research Laboratory, Hitachi Ltd.)
[B-5-2]Minority Carrier Diffusion Lengths in Silicon Ribbon Solar Cells
Yasuo Ikawa, Akimichi Hojo, Masashi Nakagawa(1.Toshiba R & D Center, Electron Devices Lab. Tokyo Shibaura Electric Co., Ltd.)
[B-6-1]Anodic Oxidation of GaAs in Oxygen Plasma
K. Yamasaki, T. Sugano(1.Department of Electronic Engineering The University of Tokyo)
[B-6-2]In Depth Profiles of Oxide Films on GaAs Studied by XPS
Y. Mizokawa, H. Iwasaki, R. Nishitani, S. Nakamura(1.Junior College of Engin ering, University of Osaka Prefecture, 2.The Institute of Scientific and Industrial Research, Osaka University)
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