Session Details
[SO-PS-02]02: Advanced and Emerging Memories / New Applications
Wed. Sep 17, 2025 1:30 PM - 2:32 PM JST
Wed. Sep 17, 2025 4:30 AM - 5:32 AM UTC
Wed. Sep 17, 2025 4:30 AM - 5:32 AM UTC
Room B (302, 3rd Floor)
Session Chair: Xu Bai (NanoBridge Semiconductor, Inc.)
[SO-PS-02-01]NH3 Plasma-Enhanced Ferroelectricity in P-FeFETs for Robust Multi-Level-Cell and Neuromorphic Memory Applications
〇Jia-Tai Wu1, Cheng-Hung Wu1, Wei-Tung Chen1, Chun-Jung Su2, Vita Pi-Ho Hu1 (1. National Taiwan Univ. (Taiwan), 2. National Yang Ming Chiao Tung Univ. (Taiwan))
[SO-PS-02-02]A Novel Hybrid 1T U-MOSFET/TFET Memory Cell with 5-ns Programming, >100-ms Retention, and >109 Endurance Cycles
〇Hang Xu1, Jianbin Guo1, Peng Liao1, Yanghao Wang1, Yafen Yang1, Qingqing Sun1, David wei Zhang1 (1. Fudan University (China))
[SO-PS-02-03]Cryogenic Characterization of HfO2-Based RRAM: Exploring Multilevel Switching from 300 K to 1.5 K for Neuromorphic Quantum Computing
〇Emilio Perez-Bosch Quesada1, Alberto Mistroni1, Ruolan Jia2, Keerthi Dorai Swamy Reddy1, Markus Fritscher1,4, Felix Reichmann1, Helena Castan3, Salvador Dueñas3, Christian Wenger1,4, Eduardo Perez1,4 (1. IHP - Leibniz Inst. for High Performance Microelectronics (Germany), 2. Micro- and Nanosystems Tech., Technical Univ. of Munich (Germany), 3. Department of Electronics, Univ. de Valladolid (Spain), 4. BTU Cottbus-Senftenberg (Germany))
[SO-PS-02-04]Modeling Shallow and Deep Trapping Behavior Influenced by Tunneling Oxide in Charge Trap Flash Devices
〇Joonhyung Cho1,2, Joon Hwang1, Suyoung Park1, Min-Kyu Park3, Jong-Ho Lee1 (1. Seoul National Univ. (Korea), 2. SK Hynix Inc. (Korea), 3. Gachon Univ. (Korea))
[SO-PS-02-05]Erasing by Hot Hole Injection in eSTMTM device: Comprehension & Optimization
〇Celine Belabbas1, Vincenzo Della Marca1, Pierre Canet1, Marc Mantelli2, Thibault Kempf2, Arnaud Regnier2, Stephan Niel3, Francesco La Rosa2 (1. Aix-Marseille Univ., Toulon Univ., CNRS, IM2NP, Marseille (France), 2. STMicroelectronics, Rousset (France), 3. STMicroelectronics, Crolles (France))
[SO-PS-02-06]Impacts of Grain-to-Grain Variability on Ferroelectric Polarization Switching in HZO
〇Gui-Huai Chen1, Pin Su1 (1. National Yang Ming Chiao Tung University (Taiwan))
[SO-PS-02-07]Adjusting Interface States by Rapid Surface Annealing to Control Current Relaxation Property of Pt/Nb:SrTiO3 Resistive Random Access Memory
〇Taiga Seto1, Yumeng Zheng1, Kentaro Kinoshita1 (1. Tokyo Univ. of Sci. (Japan))
[SO-PS-02-08]Improvement on Ferroelectricity of HfO2-ZrO2 Superlattice on Si with an Ultra-thin Si3N4 Interfacial Layer
〇Jiayuan Zhang1,2, Zhuoyi Ma1, Nazmus Sakib2, Anjana Rajan1,2, Andreas Grenmyr1,2, Detlev Grützmacher1, Joachim Knoch2, Qing-Tai Zhao1 (1. Res. Center Jülich (Germany), 2. RWTH Aachen (Germany))
[SO-PS-02-09]High-stability Ultrathin InGaO Transistors for High-performance 2T0C DRAM
〇jiakang li1, xuefei li1, peiyan hong1, chenchen ye1 (1. Huazhong University of Science and Technology (China))
[SO-PS-02-10]Duration of Disturbance Tolerance Governed Bias Selection in 1T-DRAM Array
〇Abhinav Kranti1, Rohit Kumar Nirala1, Manish Gupta2 (1. Indian Institute of Technology Indore (India), 2. Birla Institute of Technology and Science Pilani, K.K. Birla Goa Campus (India))
[SO-PS-02-11]Switching Dynamics of TiN and Pd Gated MFIS Hf0.5Zr0.5O2 Capacitors: Impact of Gate Metal and Bias Polarity on Ferroelectric Operation
〇Wei Tung Chen1, Jia-Tai Wu1, Cheng-Hung Wu1, Chun-Jung Su2,3, Vita Pi-Ho Hu1 (1. National Taiwan Univ. (Taiwan), 2. National Yang Ming Chiao Tung Univ. (Taiwan), 3. Taiwan Semiconductor Research Inst. (Taiwan))
[SO-PS-02-12]In-Memory Computation Using Positive Feedback Field Effect Transistor Array Based on Charge Trap Layer for Boolean Logic Operations
〇Hyunjun Yeom1, Jaewon Lee1, Min-Woo Kwon1 (1. Seoul Nat'l Univ. of Sci. & Tech. (Korea))
[SO-PS-02-13]Approximate Neural Network Using Vertical NAND Flash Memory
〇Sung-Ho Park1, Ryun-Han Koo1, Yeongheon Yang2, Jiseong Im1, Jonghyun Ko1, Jong-Ho Lee1 (1. Seoul National Univ. (Korea), 2. SK hynix Inc. (Korea))
[SO-PS-02-14]Novel Se-based Phase-Change Materials for Next-Generation Embedded Phase-Change Memories
〇Pierre Meilleur1,2, Oussama Mouawad1, Martina Tomelleri1, Jean-Baptiste Dory1, Nicolas Bernier1, Yoann Brûlé1, Jules Lagrave1, Jean-Yves Raty3, François Hippert4, Daniel Benoit2, Pierre Noé1 (1. Inst. CEA-LETI (France), 2. Indus. STMicroelectronics (France), 3. FRS-FNRS, CESAM, Univ. of Liège (Belgium), 4. Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP (France))
[SO-PS-02-15]Comparative Evaluation of Recovery Schemes for Hafnium-Based Ferroelectric Capacitors
〇Man Yutai1, Du Peiyuan1,2, Liu Huan1,2, Yu Fei1,2, Li Dongya1,2, Zhang Hongrui1, Chen Bing1,2, Cheng Ran3, Ke Mengnan4, Liu Yan2, Yu Xiao1,2, Han Genquan1,2 (1. Hangzhou Institute of Technology, Xidian University (China), 2. School of Microelectronics, Xidian University (China), 3. College of Integrated Circuits, Zhejiang University (China), 4. Institute for Multidisciplinary Sciences, Yokohama National University (Japan))
[SO-PS-02-16]3D NAND Memory Reliability Improvement by Tailoring Program/Erase Stress
〇Jayavel Pachamuthu1, Yanfang Shi2, Peng Zhang1, Deepanshu Dutta1 (1. SanDisk Corporation (United States of America), 2. SanDisk Information Technology (China))
[SO-PS-02-17]Low-Power Hierarchical Similarity Search Using Analog CAM Based on Dual-Gate FET
〇In-Seok Lee1,2, Kyu-Ho Lee1,2, Sung Yun Woo3, Jong-Ho Lee1,2 (1. Seoul National University (Korea), 2. Inter-Univ. Semiconductor Res. Center (Korea), 3. The Univ. of Kyungpook (Korea))
[SO-PS-02-18]Predictive Model of High Source-Drain Voltage induced Degradation of Select Transistors in Nonvolatile Memory Arrays
〇Junru Qu1, Dong Liu2, Jiabao Ye1, Bing Chen3, Ran Cheng1, Xiao Yu3, Yan Liu3, Genquan Han3 (1. College of Integrated Circuit, Zhejiang University, Hangzhou, China (China), 2. Polytechnic Institution, Zhejiang University, Hangzhou, China (China), 3. Hangzhou Institute of Technology, Xidian University, Hangzhou, China (China))
[SO-PS-02-19]Silicon Carbide-Based Nonvolatile Interface-Type Resistive Switching Memory
〇Yumeng Zheng1, Tomohiro Baba1, Kentaro Kinoshita1 (1. Tokyo Univ. of Science (Japan))
[SO-PS-02-20]A 319.3-TOPS/W High-Efficient Neuromorphic Engine with 55nm High-Density Multi-Level NOR-flash-based Event-Driven Computing-in-Memory Array
〇Yue Cheng1, Yaolei Guo1, Hanfeng Wang1, Zhaolong He3,4, Chenhao Tang1, Xinjian Wang1, Jingyao Chi1, Dawei Gao1,2,3, Dianyu Qi1,2,3, Yitao Ma1,2,3 (1. Zhejiang University (China), 2. ZJU-Hangzhou Global Scientific and Technological Innovation Center (China), 3. Zhejiang ICsprout Semiconductor Co., Ltd (China), 4. University of Science and Technology of China (China))
[SO-PS-02-21]Area- and Shape-dependent Ferroelectric Properties of AlScN-based MFM Capacitors
〇Yoojin Lim1, Hyeongjun Joo1, Sisung Yoon1, Geonwook Yoo1 (1. Soongsil Univ. (Korea))
[SO-PS-02-22]Cycling voltage dependence of the oxygen vacancy concentration profile in 6 nm HfxZr1-xO2 based ferroelectric capacitors
〇Nick Barrett1, Gunjan Yadav1, Lucia Perez Ramirez1, Ibrahima Gueye2, Seo Okkyun2, Jean Coignus3, Nicolas Vaxelaire3, Laurent Grenouillet3 (1. CEA Saclay (France), 2. SPring-8 (Japan), 3. CEA-Leti (France))
[SO-PS-02-23]Al2O3 Intercalation and Phase-Asymmetric Engineering for Thermal-Budget-Friendly HfxZr1-xO2 Planar and 3D DRAM Capacitors
〇Congcong Xu1, Hongwei Hao1,2, Zhuo Chen1,3, Jian Rong1, Dan Lv1, Lianqi Zhao1, Yongchang Li1, Lu Wang1, Dongdong Li1 (1. Zhangjiang Laboratory (China), 2. Shanghai Jiao Tong University (China), 3. Fudan University (China))
[SO-PS-02-24]Intrinsic ion migration-induced Nitride-enhanced Memristor with ultralow operating voltage
〇Zijian Wang1,2, Xuemeng Fan1,2, Guobin Zhang1,2, Pengtao Li1,2, Shengpeng Xing1,2, Zhejia Zhang1,2, Qi Luo1,2, Baichen Zhu1,2, Yishu Zhang1,2 (1. Zhejiang University (China), 2. ZJU-Hangzhou Global Scientific and Technological Innovation Center (China))
[SO-PS-02-25]Investigation of Refresh Characteristics in 4F² Vertical DRAM Cells for Next-Generation Memory
〇GYUBEOM KIM1, DAGYO YOO1, MYUNGHYUN BAEK1 (1. Gangneung-Wonju National Univ. (Korea))
[SO-PS-02-26]Radiation-Resilient FeFET Ferroelectric Memory Enabled by Compositionally Graded Hf1-xZrxO2 Films.
〇Jung-Ting Chang1, Yung-Hsien Hsu Wu1 (1. National Tsing Hua University (Taiwan))
[SO-PS-02-27]Optimizing Joint Structure to Improve Cell Current in Misaligned Dual-Deck 3D NAND Flash
Daewoong Kang1, 〇Joohyo Kim1,2, Sungho Park1,2, Nayoon Kang1,3, Jeongnam Youn1, Youngho Jung4 (1. Seoul National University (Korea), 2. Chung-Ang University (Korea), 3. Soongsil Univ. (Korea), 4. Daegu University (Korea))
[SO-PS-02-28]Fringe-Field-Controlled Optimized Spatial Distribution of Trap Charge to Overcome Z-Pitch Scaling Limits in 3D NAND Flash
〇seungmin lee1, Yong Kyu Lee2, Yong Sang Kim3 (1. Sungkyunkwan Univ. Samsung electronics (Korea), 2. Samsung electronics (Korea), 3. Sungkyunkwan Univ. (Korea))
[SO-PS-02-29]Improvement of Polarization, Cycle Endurance and Switching Speed under Low- voltage Operation in 3.5nm HfO2/ZrO2 Ferroelectric Capacitors by Remote H2/O2 Plasma Treatment
〇Wei-Kuo Tseng1, Y.-T. Tang1 (1. Dept. of Electrical Engineering, National Central Univ. (Taiwan))
[SO-PS-02-30 (Late News)]Flexible RRAM Memory Devices for Bio-Inspired Computing: Back End of Line Compatible Toward Visual Processing and Logic Operations
〇Manoj Kumar Rajbhar1, Dayanand Kumar1, Hanrui Li1, Dhananjay Kumbhar1, Abdul Momin Syed1, Hasan Ansari1, Serhii Tytov1, Bashayr Alqahtani1, Nazek El-Atab1 (1. King Abdullah University of Science and Technology (Saudi Arabia))
[SO-PS-02-31 (Late News)]Hybrid SLC/MLC ReRAM for Quantized KV Cache in Transformer-based LLM
〇Shota Suzuki1, Naoko Misawa1, Chihiro Matsui1, Ken Takeuchi1,2 (1. Department of Electrical Engineering and Information Systems, The University of Tokyo (Japan), 2. Systems Design Lab., Graduate School of Engineering, The University of Tokyo (Japan))