Session Details

[16p-K202-1~12]Atomic Layer Process (ALP) analysis and application technologies

Sun. Mar 16, 2025 1:30 PM - 5:15 PM JST
Sun. Mar 16, 2025 4:30 AM - 8:15 AM UTC
K202 (Lecture Hall Bldg.)
Takeshi Momose(Kumamoto Univ.), Kazuhiro Karahashi(Osaka univ.)

[16p-K202-1]Surface Reaction Analysis in Semiconductor Manufacturing Processes Using a Versatile Neural Network Potential

〇Kota Matsumoto1, Makoto Sato1, Yusuke Asano1 (1.PFCC, Inc.)
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[16p-K202-2]Current Status and Future Prospects of Quantum Computers: Application to Chemical Reaction Analysis

〇Yuya Nakagawa1 (1.QunaSys)
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[16p-K202-3]Development of high vapor pressure metal complexes for ALD

〇Noboru Sato1, Naoyuki Hoshiya2, Akiyoshi Yamauchi2, Shigehito Sagisaka2, Yosuke Kishikawa2, Yuxuan Wu1, Jun Yamaguchi1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.The Univ. of Tokyo, 2.DAIKIN Industries, LTD)
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[16p-K202-4]The effect of H2 purge during TiN film formation analyzed using universal machine learning potential

〇Taichi Monden1, Miyu Yoshida3, Toi Murakami3, Yoshitada Morikawa3, HU LI2 (1.TEL, 2.TEA, 3.Osaka Univ)
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[16p-K202-5]Analysis of Surface Reactions during TiN Thin Film Deposition Process Using Atomic Simulation

〇(M2)Miyu Yoshida1, Toi Murakami1, Taichi Monden2, Hu Li3, Halim Harry1, Yoshitada Morikawa1 (1.Osaka Univ., 2.TEL, 3.TEA)
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[16p-K202-6]Atomic-Scale Numerical Simulations of SiN atomic-layer deposition (ALD)

Abdullah Y. Jaber1, Jomar U. Tercero1, Tomoko Ito1, Kazuhiro Karahashi1, Kazumasa Ikuse1, Michiro Isobe1, 〇Satoshi Hamaguchi1 (1.Osaka Univ.)
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[16p-K202-7]Adsorption state study of Trimethylaluminum using neural network potential

〇Yuxuan Wu1, Jun Yamaguchi1, Noboru Sato1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.The University of Tokyo)
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[16p-K202-8]Computation of Al2O3 ALD by trimethylaluminum with Kinetic Monte Carlo and neural
network potential

〇Yichen ZOU1, Yuxuan Wu1, Jun Yamaguchi1, Noboru Sato1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.The Univ. of Tokyo)
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[16p-K202-9]Demonstration and evaluation of zinc aluminum oxide deposition using room temperature atomic layer deposition with a sequential adsorption

Haruto Suzuki1, 〇Ryo Miyazawa1, Hibiki Takeda1, Satoshi Suzaki1, Ryoji Oonishi1, Fumihiko Hirose1 (1.Yamagata Univ.)
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[16p-K202-10]Fabrication and evaluation of aluminum silicate thin films for alkali metal recovery

〇Hibiki Takeda1, Ryo Miyazawa1, Haruto Suzuki1, Fumihiko Hirose1 (1.Yamagata Univ.)
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[16p-K202-11]Evaluation of initial nucleation of Co-ALD using CCTBA

〇Naoki Tamaoki1, Yubin Deng1, Jun Yamaguchi1, Noboru Sato1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.Univ. Tokyo)
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[16p-K202-12]Study of Pd activation effect on the Co-ALD process

〇(P)Yubin DENG1, Jun Yamaguchi1, Yuhei Otaka1, Naoki Tamaoki1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.The Univ. of Tokyo)
Comment()