[PS-01-01]Influence of Substrate Accepter Concentration on the Density of States in MOS Structures
〇Kaoru Kato1, Hajime Tanaka1, Nobuya Mori1
(1. The Univ. of Osaka (Japan))
Wed. Sep 17, 2025 6:00 AM - 8:00 AM UTC
〇Kaoru Kato1, Hajime Tanaka1, Nobuya Mori1
(1. The Univ. of Osaka (Japan))
〇Takefumi Kamioka1, Junichi Hattori1, Naoya Okada1, Koichi Fukuda1
(1. AIST (Japan))
〇Akira Tsuchiya1
(1. The Univ. of Shiga Prefecture (Japan))
〇Geng-Lun Li1, Yu-Cheng Lu1, Vita Pi-Ho Hu1
(1. National Taiwan Univ. (Taiwan))
〇Jaehong Park1,2, Seung Kyu Kim1,2, Johyeon Kim1, Kee-Won Kwon1, Jongwook Jeon1
(1. The Univ. Sungkyunkwan (Korea), 2. Samsung Electronics (Korea))
〇Zhih-Yun Kuo1, Hao-Siou Huang1, Bo-Cheng Chen1, I-Ling Li1, Ning-Yuan Lue1, Chao-Hui Yeh1
(1. The Univ. of Taiwan (Taiwan))
〇Hwichan - Jeon1, Min-Woo - Kwon1
(1. Seoul National Univ. of Sci. and Tech. (Korea))
〇Ki-Ju Park1, Seong-Hwan Lim1, Jin-Wook Shin2, Jong-Heon Yang2, Won-Ju Cho1
(1. The Univ. of Kwangwoon (Korea), 2. The Lab. of ETRI (Korea))
〇Rina Takahisa1, Takashi Onaya1,2, Atsushi Tamura1, Koji Kita1
(1. Department of Advanced Materials Science, Graduate School of Frontier Sciences, The Univ. of Tokyo (Japan), 2. Res. Center for Materials Nanoarchitectonics (MANA), National Inst. for Materials Sci. (Japan))
〇Hong-Yan Zhu1, Yu-Chun Li1, Zi-Ying Huang1, Hao-Lin Liao1, Wei-Min Li2, David Wei Zhang Zhang1, Hong-Liang Lu1
(1. Fudan University (China), 2. Jiangsu Leadmicro Nano Technol Co Ltd (China))
〇Xiu Yang1, Hongrui Zhang1, Di Wang1, Kai Xiong1, Xiao Yu1, Bing Chen1, Yan Liu1, Genquan Han1
(1. HangZhou Inst. of Tech., Xidian Univ. (China))
〇Hongmei Zhang1, Yang liu1, YuChun Li1, HaiYang Liu1, Hongliang Liu1, Xiaona Zhu1,2, Shaofeng Yu1, Wei - Zhang1,2
(1. Fudan university (China), 2. Jiashan Fudan Institute (China))
〇Yi-Hsuan Yu1, Pin Su1
(1. National Yang Ming Chiao Tung Univ. (Taiwan))
〇Seung-Hyun Lee1, Won-Ju Cho1
(1. Kwangwoon Univ. (Korea))
〇Adhi Cahyo Wijaya1, Jyh Chyurn Guo1
(1. National Yang Ming Chiao Tung University (Taiwan))
〇Jia-Tai Wu1, Cheng-Hung Wu1, Wei-Tung Chen1, Chun-Jung Su2, Vita Pi-Ho Hu1
(1. National Taiwan Univ. (Taiwan), 2. National Yang Ming Chiao Tung Univ. (Taiwan))
〇Hang Xu1, Jianbin Guo1, Peng Liao1, Yanghao Wang1, Yafen Yang1, Qingqing Sun1, David wei Zhang1
(1. Fudan University (China))
〇Emilio Perez-Bosch Quesada1, Alberto Mistroni1, Ruolan Jia2, Keerthi Dorai Swamy Reddy1, Markus Fritscher1,4, Felix Reichmann1, Helena Castan3, Salvador Dueñas3, Christian Wenger1,4, Eduardo Perez1,4
(1. IHP - Leibniz Inst. for High Performance Microelectronics (Germany), 2. Micro- and Nanosystems Tech., Technical Univ. of Munich (Germany), 3. Department of Electronics, Univ. de Valladolid (Spain), 4. BTU Cottbus-Senftenberg (Germany))
〇Joonhyung Cho1,2, Joon Hwang1, Suyoung Park1, Min-Kyu Park3, Jong-Ho Lee1
(1. Seoul National Univ. (Korea), 2. SK Hynix Inc. (Korea), 3. Gachon Univ. (Korea))
〇Celine Belabbas1, Vincenzo Della Marca1, Pierre Canet1, Marc Mantelli2, Thibault Kempf2, Arnaud Regnier2, Stephan Niel3, Francesco La Rosa2
(1. Aix-Marseille Univ., Toulon Univ., CNRS, IM2NP, Marseille (France), 2. STMicroelectronics, Rousset (France), 3. STMicroelectronics, Crolles (France))
〇Gui-Huai Chen1, Pin Su1
(1. National Yang Ming Chiao Tung University (Taiwan))
〇Taiga Seto1, Yumeng Zheng1, Kentaro Kinoshita1
(1. Tokyo Univ. of Sci. (Japan))
〇Jiayuan Zhang1,2, Zhuoyi Ma1, Nazmus Sakib2, Anjana Rajan1,2, Andreas Grenmyr1,2, Detlev Grützmacher1, Joachim Knoch2, Qing-Tai Zhao1
(1. Res. Center Jülich (Germany), 2. RWTH Aachen (Germany))
〇jiakang li1, xuefei li1, peiyan hong1, chenchen ye1
(1. Huazhong University of Science and Technology (China))
〇Abhinav Kranti1, Rohit Kumar Nirala1, Manish Gupta2
(1. Indian Institute of Technology Indore (India), 2. Birla Institute of Technology and Science Pilani, K.K. Birla Goa Campus (India))
〇Wei Tung Chen1, Jia-Tai Wu1, Cheng-Hung Wu1, Chun-Jung Su2,3, Vita Pi-Ho Hu1
(1. National Taiwan Univ. (Taiwan), 2. National Yang Ming Chiao Tung Univ. (Taiwan), 3. Taiwan Semiconductor Research Inst. (Taiwan))
〇Hyunjun Yeom1, Jaewon Lee1, Min-Woo Kwon1
(1. Seoul Nat'l Univ. of Sci. & Tech. (Korea))
〇Sung-Ho Park1, Ryun-Han Koo1, Yeongheon Yang2, Jiseong Im1, Jonghyun Ko1, Jong-Ho Lee1
(1. Seoul National Univ. (Korea), 2. SK hynix Inc. (Korea))
〇Pierre Meilleur1,2, Oussama Mouawad1, Martina Tomelleri1, Jean-Baptiste Dory1, Nicolas Bernier1, Yoann Brûlé1, Jules Lagrave1, Jean-Yves Raty3, François Hippert4, Daniel Benoit2, Pierre Noé1
(1. Inst. CEA-LETI (France), 2. Indus. STMicroelectronics (France), 3. FRS-FNRS, CESAM, Univ. of Liège (Belgium), 4. Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP (France))
〇Man Yutai1, Du Peiyuan1,2, Liu Huan1,2, Yu Fei1,2, Li Dongya1,2, Zhang Hongrui1, Chen Bing1,2, Cheng Ran3, Ke Mengnan4, Liu Yan2, Yu Xiao1,2, Han Genquan1,2
(1. Hangzhou Institute of Technology, Xidian University (China), 2. School of Microelectronics, Xidian University (China), 3. College of Integrated Circuits, Zhejiang University (China), 4. Institute for Multidisciplinary Sciences, Yokohama National University (Japan))
〇Jayavel Pachamuthu1, Yanfang Shi2, Peng Zhang1, Deepanshu Dutta1
(1. SanDisk Corporation (United States of America), 2. SanDisk Information Technology (China))
〇In-Seok Lee1,2, Kyu-Ho Lee1,2, Sung Yun Woo3, Jong-Ho Lee1,2
(1. Seoul National University (Korea), 2. Inter-Univ. Semiconductor Res. Center (Korea), 3. The Univ. of Kyungpook (Korea))
〇Junru Qu1, Dong Liu2, Jiabao Ye1, Bing Chen3, Ran Cheng1, Xiao Yu3, Yan Liu3, Genquan Han3
(1. College of Integrated Circuit, Zhejiang University, Hangzhou, China (China), 2. Polytechnic Institution, Zhejiang University, Hangzhou, China (China), 3. Hangzhou Institute of Technology, Xidian University, Hangzhou, China (China))
〇Yumeng Zheng1, Tomohiro Baba1, Kentaro Kinoshita1
(1. Tokyo Univ. of Science (Japan))
〇Yue Cheng1, Yaolei Guo1, Hanfeng Wang1, Zhaolong He3,4, Chenhao Tang1, Xinjian Wang1, Jingyao Chi1, Dawei Gao1,2,3, Dianyu Qi1,2,3, Yitao Ma1,2,3
(1. Zhejiang University (China), 2. ZJU-Hangzhou Global Scientific and Technological Innovation Center (China), 3. Zhejiang ICsprout Semiconductor Co., Ltd (China), 4. University of Science and Technology of China (China))
〇Yoojin Lim1, Hyeongjun Joo1, Sisung Yoon1, Geonwook Yoo1
(1. Soongsil Univ. (Korea))
〇Nick Barrett1, Gunjan Yadav1, Lucia Perez Ramirez1, Ibrahima Gueye2, Seo Okkyun2, Jean Coignus3, Nicolas Vaxelaire3, Laurent Grenouillet3
(1. CEA Saclay (France), 2. SPring-8 (Japan), 3. CEA-Leti (France))
〇Congcong Xu1, Hongwei Hao1,2, Zhuo Chen1,3, Jian Rong1, Dan Lv1, Lianqi Zhao1, Yongchang Li1, Lu Wang1, Dongdong Li1
(1. Zhangjiang Laboratory (China), 2. Shanghai Jiao Tong University (China), 3. Fudan University (China))
〇Zijian Wang1,2, Xuemeng Fan1,2, Guobin Zhang1,2, Pengtao Li1,2, Shengpeng Xing1,2, Zhejia Zhang1,2, Qi Luo1,2, Baichen Zhu1,2, Yishu Zhang1,2
(1. Zhejiang University (China), 2. ZJU-Hangzhou Global Scientific and Technological Innovation Center (China))
〇GYUBEOM KIM1, DAGYO YOO1, MYUNGHYUN BAEK1
(1. Gangneung-Wonju National Univ. (Korea))
〇Jung-Ting Chang1, Yung-Hsien Hsu Wu1
(1. National Tsing Hua University (Taiwan))
Daewoong Kang1, 〇Joohyo Kim1,2, Sungho Park1,2, Nayoon Kang1,3, Jeongnam Youn1, Youngho Jung4
(1. Seoul National University (Korea), 2. Chung-Ang University (Korea), 3. Soongsil Univ. (Korea), 4. Daegu University (Korea))
〇seungmin lee1, Yong Kyu Lee2, Yong Sang Kim3
(1. Sungkyunkwan Univ. Samsung electronics (Korea), 2. Samsung electronics (Korea), 3. Sungkyunkwan Univ. (Korea))
〇Wei-Kuo Tseng1, Y.-T. Tang1
(1. Dept. of Electrical Engineering, National Central Univ. (Taiwan))
〇Manoj Kumar Rajbhar1, Dayanand Kumar1, Hanrui Li1, Dhananjay Kumbhar1, Abdul Momin Syed1, Hasan Ansari1, Serhii Tytov1, Bashayr Alqahtani1, Nazek El-Atab1
(1. King Abdullah University of Science and Technology (Saudi Arabia))
〇Shota Suzuki1, Naoko Misawa1, Chihiro Matsui1, Ken Takeuchi1,2
(1. Department of Electrical Engineering and Information Systems, The University of Tokyo (Japan), 2. Systems Design Lab., Graduate School of Engineering, The University of Tokyo (Japan))
〇Yuichi Watanabe1, Yasuhiro Oyama1, Naoaki Tanaka1, Zhouran Han2, Vince McGahay3, Karen Barker3, Jeff Gambino3
(1. onsemi (Japan), 2. University of Illinois Urbana-Champaign, (United States of America), 3. onsemi US (United States of America))
〇Zhan Zhen wei1
(1. National Central University (Taiwan))
〇SEKI HONG1,2, Jimyoung Lee1,2, Seung Kyu Kim1,2, Jongwook Jeon1, Kee-Won Kwon1
(1. The Univ. of Sungkyunkwan (Korea), 2. Corp. Samsung electronics (Korea))
〇Toshiya Sasaki1, Mihyeon Kim1, Paul James Fons2, Yuta Saito1
(1. Tohoku Univ. (Japan), 2. Keio Univ. (Japan))