ICSCRM2026
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Sessions(by Program Type)

Oral Session

Track 05 MOS Gate Stack Processing and Characterization

[Mo-1A]MOS Interface Processing

Mon. Sep 28, 2026 3:10 PM - 4:40 PM JST
Mon. Sep 28, 2026 6:10 AM - 7:40 AM UTC
Oral-A(1st Floor, G7+G8)
Chair:Fabrizio Roccaforte(CNR-IMM, Italy), Hirohisa Hirai(National Institute of Industrial Science and Technology, Japan)
Track 01 Bulk Growth and Wafer Processing

[Mo-1B]Bulk Growth I

Mon. Sep 28, 2026 3:10 PM - 4:40 PM JST
Mon. Sep 28, 2026 6:10 AM - 7:40 AM UTC
Oral-B(3rd Floor, G303+G304)
Chair:Didier Chaussende(CNRS / Université Grenoble Alpes, France), Chao Gao(SICC, China)
Track 06 Implantation, Contacts, Etching, and Other Processes

[Mo-2A]Metal Contacts and Interface Engineering

Mon. Sep 28, 2026 5:00 PM - 6:30 PM JST
Mon. Sep 28, 2026 8:00 AM - 9:30 AM UTC
Oral-A(1st Floor, G7+G8)
Chair:Shin-Ichiro Kuroki(Hiroshima University, Japan), Arash Salemi(Navitas Semiconductor, USA)
Track 10 Quantum Applications and Sensors

[Mo-2B]Emerging Quantum Color Centers

Mon. Sep 28, 2026 5:00 PM - 6:30 PM JST
Mon. Sep 28, 2026 8:00 AM - 9:30 AM UTC
Oral-B(3rd Floor, G303+G304)
Chair:Takuma Kobayashi(The University of Osaka, Japan), Marianne Etzelmüller Bathen(University of Oslo, Norway)
Track 07 Power Devices

[Tu-1A]Novel Architectures

Tue. Sep 29, 2026 8:40 AM - 10:20 AM JST
Tue. Sep 29, 2026 11:40 PM - 1:20 AM UTC
Oral-A(1st Floor, G7+G8)
Chair:Mario Giuseppe Saggio(STMicroelectronics, Italy), Victor Veliadis(PowerAmerica, USA)
Track 01 Bulk Growth and Wafer Processing

[Tu-1B]Bulk Growth II

Tue. Sep 29, 2026 8:40 AM - 10:10 AM JST
Tue. Sep 29, 2026 11:40 PM - 1:10 AM UTC
Oral-B(3rd Floor, G303+G304)
Chair:Seong-Min JEONG(Korea Institute of Ceramic Engineering and Technology, Korea), Elif Balkas(Wolfspeed, USA)
Track 05 MOS Gate Stack Processing and Characterization

[Tu-2A]FinFET and Trench Interfaces

Tue. Sep 29, 2026 10:40 AM - 12:30 PM JST
Tue. Sep 29, 2026 1:40 AM - 3:30 AM UTC
Oral-A(1st Floor, G7+G8)
Chair:Edward Robert Van Brunt(onsemi, USA), Takuji Hosoi(National Institute for Materials Science, Japan)
Track 03 Extended Defects

[Tu-2B]Extended Defects I

Tue. Sep 29, 2026 10:40 AM - 12:30 PM JST
Tue. Sep 29, 2026 1:40 AM - 3:30 AM UTC
Oral-B(3rd Floor, G303+G304)
Chair:Nadeemullah A. Mahadik(United States Naval Research Laboratory, USA), Soon-Ku Hong(Chungnam National University, Korea)
Track 06 Implantation, Contacts, Etching, and Other Processes

[Tu-3A]Implantation and Trench Process Optimization

Tue. Sep 29, 2026 2:00 PM - 3:50 PM JST
Tue. Sep 29, 2026 5:00 AM - 6:50 AM UTC
Oral-A(1st Floor, G7+G8)
Chair:Michael Robert Jennings(Swansea University, UK), Mathias Rommel(Fraunhofer IISB, Germany)
Track 08 RF, High-Temp., and Rad-Hard Devices and ICs

[Tu-3B]Rad-Hard Devices and High-Temp. ICs

Tue. Sep 29, 2026 2:00 PM - 3:50 PM JST
Tue. Sep 29, 2026 5:00 AM - 6:50 AM UTC
Oral-B(3rd Floor, G303+G304)
Chair:Sang-Mo Koo(Kwangwoon University, Korea), Mitsuaki Kaneko(Kyoto University, Japan)
Track 09 Device and Module Reliability, Packaging, and Applications

[We-1A]Robustness

Wed. Sep 30, 2026 8:40 AM - 10:00 AM JST
Wed. Sep 30, 2026 11:40 PM - 1:00 AM UTC
Oral-A(1st Floor, G7+G8)
Chair:Dominique PLANSON(Institute National des Sciences Appliquées de Lyon, France), Donald Gajewski(Wolfspeed, USA)
Track 10 Quantum Applications and Sensors

[We-1B]Optimizing Access to Si Vacancies

Wed. Sep 30, 2026 8:40 AM - 10:10 AM JST
Wed. Sep 30, 2026 11:40 PM - 1:10 AM UTC
Oral-B(3rd Floor, G303+G304)
Chair:Takeshi Ohshima(National Institutes for Quantum Science and Technology, Japan), Rachael L. Myers-Ward(United States Naval Research Laboratory, USA)
Track 07 Power Devices

[We-2A]MOSFETs

Wed. Sep 30, 2026 10:30 AM - 12:20 PM JST
Wed. Sep 30, 2026 1:30 AM - 3:20 AM UTC
Oral-A(1st Floor, G7+G8)
Chair:KUNGYEN LEE(National Taiwan University, Taiwan), Hiroki Niwa(Mitsubishi Electric, Japan)
Track 03 Extended Defects

[We-2B]Stacking Fault Expansion

Wed. Sep 30, 2026 10:40 AM - 12:30 PM JST
Wed. Sep 30, 2026 1:40 AM - 3:30 AM UTC
Oral-B(3rd Floor, G303+G304)
Chair:Ulrike Grossner(ETH Zürich, Switzerland), Tsunenobu Kimoto(Kyoto University, Japan)
Track 07 Power Devices

[We-3A]High Voltage Devices

Wed. Sep 30, 2026 2:00 PM - 3:50 PM JST
Wed. Sep 30, 2026 5:00 AM - 6:50 AM UTC
Oral-A(1st Floor, G7+G8)
Chair:Yoshiyuki Yonezawa(National Institute of Advanced Industrial Science and Technology, Japan), Andrea Irace(University of Naples Federico II, Italy)
Track 02 Epitaxial and Thin-Film Growth

[We-3B]SiC and Related Material Epitaxy

Wed. Sep 30, 2026 2:00 PM - 3:50 PM JST
Wed. Sep 30, 2026 5:00 AM - 6:50 AM UTC
Oral-B(3rd Floor, G303+G304)
Chair:Rachael L. Myers-Ward(United States Naval Research Laboratory, USA), Jawad Ul Hassan(Linköping University, Sweden)
Track 09 Device and Module Reliability, Packaging, and Applications

[Th-1A]Reliability

Thu. Oct 1, 2026 9:50 AM - 12:00 PM JST
Thu. Oct 1, 2026 12:50 AM - 3:00 AM UTC
Oral-A(1st Floor, G7+G8)
Chair:Shiori Idaka(Mitsubishi Electric Europe, Japan), Sangwon Yoon(Seoul National University, Korea)
Track 04 Point Defects and Material Properties

[Th-1B]Point Defects and Material Properties

Thu. Oct 1, 2026 9:50 AM - 12:00 PM JST
Thu. Oct 1, 2026 12:50 AM - 3:00 AM UTC
Oral-B(3rd Floor, G303+G304)
Chair:Hrishikesh Das(Indichip Semiconductors, USA), Masashi Kato(Nagoya Institute of Technology, Japan)
Track 05 MOS Gate Stack Processing and Characterization

[Th-2A]Interface Charge

Thu. Oct 1, 2026 1:30 PM - 2:50 PM JST
Thu. Oct 1, 2026 4:30 AM - 5:50 AM UTC
Oral-A(1st Floor, G7+G8)
Chair:Hirohisa Hirai(National Institute of Industrial Science and Technology, Japan), Patrick Fiorenza(CNR-IMM, Italy)
Track 10 Quantum Applications and Sensors

[Th-2B]Si Vacancies towards Quantum Applications

Thu. Oct 1, 2026 1:30 PM - 2:50 PM JST
Thu. Oct 1, 2026 4:30 AM - 5:50 AM UTC
Oral-B(3rd Floor, G303+G304)
Chair:Hannes Kraus(NASA Jet Propulsion Laboratory, USA), Michael Krieger(Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany)
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