International Conference on Silicon Carbide and Related Materials (ICSCRM)

[OP]Opening Remarks

[PL-1-01(Plenary)]"Progress is Impossible without Change": Innovation as a Driver of SiC Technological Evolution

*James A Cooper¹(1. Sonrisa Research, Inc. and Purdue University(United States of America))

[PL-1-02(Plenary)]N700S Shinkansen traction system adopting SiC device ~Shinkansen rolling stock and their traction system that continue to evolve~

*Takafumi Fukushima¹(1. Central Japan Railway Company(Japan))

[IP-01(Invited)][Invited Poster Introduction]
SiC epitaxial reactor cleaning by ClF₃ gas with the help of reaction heat

Keisuke Kurashima¹, Masaya Hayashi¹, *Hitoshi Habuka¹, Hideki Ito², Shin-ichi Mitani², Yoshinao Takahashi³(1. Yokohama National University(Japan), 2. NuFlare Technology, Inc(Japan), 3. KANTO DENKA KOGYO CO., LTD(Japan))

[IP-02(Invited)][Invited Poster Introduction]
Silicon vacancy related defects in 4H SiC for quantum technology

*Andras Csore¹, Nguyen Tien Son², Ivan Gueorguiev Ivanov², Adam Gali^1,3(1. Budapest Univ. of Tech. and Economics(Hungary), 2. Linköping Univ.(Sweden), 3. Wigner Res. Centre for Physics, HAS(Hungary))

[IP-03(Invited)][Invited Poster Introduction]
Evaluation of the influence of Al⁺ implantation on the forward degradation of SiC bipolar devices

*teruaki kumazawa^1,2, Masakazu Baba², Yusuke Yamashiro², Mariko Hayashi^2,3, Manabu Takei^2,4, Kimimori Hamada¹, Shinsuke Harada², Yoshiyuki Yonezawa², Hajime Okumura²(1. Toyota Motor Corp.(Japan), 2. National Institute of Advanced Industrial Sience and Technology(AIST)(Japan), 3. DENSO CORP.(Japan), 4. Fuji Electric Co., Ltd.(Japan))

[IP-04(Invited)][Invited Poster Introduction]
Electrical Parameters Degradations of p-GaN HEMTs under Repetitive UIS Stress

*Sheng Li¹, Siyang Liu¹, Chi Zhang¹, Jiaxing Wei¹, Weifeng Sun¹, Yiheng Li², Zhichao Yang²(1. Southeast Univ.(China), 2. CorEnergy Semiconductor Corp. Ltd. (China))

[Mo-1A-01(Invited)]Design and Performance of SiC Trench MOSFETs

*Dethard Peters¹(1. Infineon Technologies AG(Germany))

[Mo-1A-02]Effects of Grounding Bottom Oxide Protection Layer in Trench-Gate SiC-MOSFET by Tilted Al Implantation

*Yutaka Fukui¹, Katsutoshi Sugawara¹, Rina Tanaka¹, Hidenori Koketsu¹, Hideyuki Hatta¹, Yusuke Miyata¹, Hiroyoshi Suzuki¹, Kensuke Taguchi¹, Yasuhiro Kagawa¹, Shingo Tomohisa¹, Naruhisa Miura¹(1. Mitsubishi Electric Corp.(Japan))

[Mo-1A-03]Performace Improvement of Trench Gate SiC MOSFET by Localized High-Concentration N-Type Ion Implantation

*Rina Tanaka¹, Katsutoshi Sugawara², Yutaka Fukui¹, Hideyuki Hatta¹, Hidenori Koketsu¹, Hiroyoshi Suzuki², Yusuke Miyata¹, Kensuke Taguchi², Yasuhiro Kagawa², Shingo Tomohisa¹, Naruhisa Miura¹(1. Advanced Technology R&D Center, Mitsubishi Electric Corp.(Japan), 2. Power Device Works, Mitsubishi Electric Corp.(Japan))

[Mo-1A-04]1200 V / 200 A V-groove Trench MOSFET Optimized for Low Power Loss and High Reliability

*Kosuke Uchida¹, Toru Hiyoshi¹, Yu Saitoh¹, Hiroshi Egusa¹, Tatsushi Kaneda¹, Hirotaka Oomori¹, Takashi Tsuno¹(1. Sumitomo Electric Industries, Ltd.(Japan))

[Mo-1B-01(Invited)]First principles calculation of highly anisotropic g-tensors of Kramers-doublet transition metals in hexagonal SiC

András Csóré¹, *Adam Gali^1,2(1. Department of Atomic Physics, Budapest University of Technology and Economics(Hungary), 2. Wigner Research Centre for Physics, Hungarian Academy of Sciences(Hungary))

[Mo-1B-02]The carbon antisite-vacancy defect in 4H-SiC: energy level and charge state control

*Nguyen Tien Son¹, Pontus Stenberg¹, Valdas Jokubavicius¹, Hiroshi Abe², Takeshi Ohshima², Jawad Ul-Hassan¹, Ivan Gueorguiev Ivanov¹(1. Department of Physics, Chemistry and Biology, Linköping Univ., SE-58183 Linköping(Sweden), 2. National Inst. for Quantum and Radiological Sci. and Tech., 1233 Watanuki, Takasaki, Gunma 370-1292(Japan))

[Mo-1B-03]Physical model of the optical charge state switching of the divacancy in 4H-SiC

*Ivan G Ivanov¹, András Csóré², Björn Magnusson^1,5, Takeshi Ohshima³, Adam Gali^2,4, Son Nguyen Tien¹(1. Linköping Univ.(Sweden), 2. Budapest Univ. of Technology and Economics(Hungary), 3. National Institutes for Quantum and Radiological Science Technology(Japan), 4. Wigner Research Centre for Physics, Hungarian Academy of Sciences(Hungary), 5. Norstel AB(Sweden))

[Mo-1B-04]Polytype Control over Spin and Optical Properties of Defects in SiC

*Victor Soltamov¹, Vladimir Dyakonov¹, Timur Biktagirov², Wolf Gero Schmidt², Uwe Gerstmann², Sergei Orlinskii ³, Pavel Baranov⁴(1. Experimental Physics VI, Julius-Maximilian Univ. of Würzburg, 97074 Würzburg(Germany), 2. Lehrstuhl für Theoretische Materialphysik, Univ. of Paderborn, 33098 Paderborn(Germany), 3. Kazan Federal Univ., 420008 Kazan(Russia), 4. Ioffe Inst., 194021 St. Petersburg(Russia))

[Mo-2A-01]Anomalous band alignment change of SiO₂/4H-SiC MOS capacitors induced by NO-POA and its possible origin

*Tae-Hyeon Kil¹, Koji Kita¹(1. Univ. of Tokyo(Japan))

[Mo-2A-02]Investigation of SiC Microwave Plasma Oxidation Kinetics via Oxygen Isotope Labelling

*Nannan You^1,2, Shengkai Wang^1,2, Jilong Hao^1,2, Yun Bai^1,2, Xinyu Liu^1,2(1. Institute of Microelectronics of the Chinese Academy of Sciences(China), 2. University of Chinese Academy of Sciences(China))

[Mo-2A-03]Impact of substrate orientation on the structure of SiO₂/SiC interface

*Xiuyan Li^1,2, Mengjun Li², Tianning Cui¹, Sang Soo Lee³, Sylvie Rangan², Alexi Aermakov², Timothy T. Fister³, Torgny Gustfsson², Eric Garfunkel², Paul Fenter³, Leonard C. feldman²(1. Shanghai Jiao Tong Univ.(China), 2. Rutgers Univ.(United States of America), 3. Argonne National Lab.(United States of America))

[Mo-2A-04]Nitridation of SiC surfaces by H₂/N₂ treatment

*Koichi Murata¹, Daisuke Mori², Aki Takigawa², Hidekazu Tsuchida¹(1. Central Research Institute of Electric Power Industry (CRIEPI)(Japan), 2. Fuji Electric Co., Ltd.(Japan))

[Mo-2A-05]Reduction of Interface States in 4H-SiC/SiO₂ near both Conduction and Valence Band Edges by High-temperature Nitrogen Annealing

*Keita Tachiki¹, Tsunenobu Kimoto¹(1. Kyoto Univ.(Japan))

[Mo-2B-01]High-quality C-face 3C-SiC(111) Grown on off-axis C-face 4H-SiC Substrates

Yuchen Shi¹, Valdas Jokubavicius¹, Ivan G. Ivanov¹, Rositsa Yakimova¹, Mikael Syväjärvi¹, *Jianwu Sun¹(1. Linkoping University, Sweden(Sweden))

[Mo-2B-02]3C-SiC growth on ISP substrates: effects of substrate geometry on void formation and growth rate

*M. Zimbone¹, C. Calabretta¹, M. Zielinski², F. Mancarella¹, Francesco La Via¹(1. CNR-IMM(Italy), 2. NOVASiC(France))

[Mo-2B-03]Analysis of Defect-Free Hot Filament CVD-grown 3C-SiC

*Bart Van Zeghbroeck¹, Ryan R Brow², Tomoko Borsa¹, David Bobela³(1. Univ. of Colorado(United States of America), 2. NREL(United States of America), 3. TrueNano Inc(United States of America))

[Mo-2B-04]Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon

*Marcin Zielinski¹, Sylvain Monnoye¹, Hugues Mank¹, Frank Torregrosa², Gregory Grosset², Yohann Spiegel², Marc Portail³, Adrien Michon³(1. NOVASiC(France), 2. IBS(France), 3. CNRS-CRHEA, UCA Univ.(France))

[Mo-2B-05]Microscopic Identification of Surface Steps of SiC by the Density-Functional Calculations

*Kaori Seino¹, Atsushi Oshiyama¹(1. Nagoya Univ.(Japan))

[Tu-1A-01(Invited)]Packaging Enables Next Generation Power Electronics

*Christoph Marczok¹, E. Hoene¹(1. Fraunhofer IZM(Germany))

[Tu-1A-02]Improving Heat Conduction of Insulated Metal Substrate with Thermal Pyrolytic Graphite Core for SiC Power Module Packaging

*Wei Fan¹, Garry Wexler², Emre Gurpinar³, Burak Ozpineci³(1. Momentive Performance Materials Inc.(United States of America), 2. Henkel Corp.(United States of America), 3. Oak Ridge National Laboratory(United States of America))

[Tu-1A-03]Impact of humidity stress on blocking reliability for SiC power devices

*Hiroyuki MATSUSHIMA¹, Yuki MORI¹, Akio SHIMA¹(1. Hitachi, Ltd. Research & development Group(Japan))

[Tu-1A-04]Power Cycling Capability and Lifetime Estimation of Discrete Silicon Carbide Power Devices

*Felix Hoffmann¹, Nando Kaminski¹(1. University of Bremen(Germany))

[Tu-1A-05LN]High Temperature Gate Voltage Step-by-Step Test to Assess Reliability Differences in 1200 V SiC MOSFETs

*Elena Mengotti¹, Enea Bianda¹, David Baumann¹, Jason Bettega¹, Joni Jormanainen²(1. ABB(Switzerland), 2. ABB Drives(Finland))

[Tu-1B-01(Invited)]Operando X-ray topography analysis of 4H-SiC MOSFETs for investigating stacking fault expansion

K. Konishi¹, R. Fujita¹, K. Kobayashi¹, A. Yoneyama¹, Y. Mori¹, *AKIO SHIMA¹(1. Research & Development Group, Hitachi, Ltd.(Japan))

[Tu-1B-02]Nitrogen Concentration Dependence of Expansion Behavior of Double Shockley Stacking Faults in 4H-SiC Studied by In-situ Synchrotron X-ray Topography

*Fumihiro Fujie¹, Shunta Harada^1,2, Hiromasa Suo^3,4, Tomohisa Kato⁴, Toru Ujihara^1,2,5(1. Department of Materials Process and Eng., Nagoya Univ.(Japan), 2. Center for Integrated Res. of Future Electronics (CIRFE), Inst. of Materials and Systems for Sustainability (IMaSS), Nagoya Univ.(Japan), 3. Showa Denko K. K.(Japan), 4. National Inst. of Advanced Indus. Sci. and Tech. (AIST)(Japan), 5. GaN Advanced Device Open Innovation Lab. (GaN-OIL), National Inst. of Advanced Indus. Sci. and Tech. (AIST)(Japan))

[Tu-1B-03]Synchrotron X-ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-grown 4H-SiC Substrate Wafers

*Tuerxun Ailihumaer¹, Balaji Raghothamachar¹, Michael Dudley¹, Gil Chung², Ian Manning², Edward Sanchez²(1. Stony Brook Univ.(United States of America), 2. Dupont Co.(United States of America))

[Tu-1B-04]Analysis of Prismatic Dislocations in 4H-SiC Crystals by Multiple-beam Diffraction Topography

*Isaho Kamata¹, Norihiro Hoshino¹, Yuichiro Tokuda², Takahiro Kanda², Naohiro Sugiyama², Hironari Kuno², Hidekazu Tsuchida¹(1. Central Res. Inst. of Electric Power Industry (CRIEPI)(Japan), 2. DENSO CORPORATION(Japan))

[Tu-1B-05]Lattice Plane Distortions Introduced by Epilayer Growth of SiC wafers

*Nadeemullah A Mahadik¹, Robert E Stahlbush¹, Stanislav Stoupin², Hrishikesh Das³, Peter Bonanno¹, Albert Macrander⁴(1. Naval Research Laboratory(United States of America), 2. Cornell High Energy Synchrotron Source, Cornell Univ.(United States of America), 3. On Semiconductor(United States of America), 4. Argonne National Lab.(United States of America))

[Tu-2A-01(Invited)]Challenges in extremely low specific on-resistance with SiC SJ-VMOSFETs

*Takeyoshi Masuda¹, Y. Saito^1,2, T. Hatayama¹, H. Michikoshi¹, Y. Mikamura², S. Harada¹(1. National Institute of Advanced Industrial Science and Technology(Japan), 2. Sumitomo Electric Industries, Ltd(Japan))

[Tu-2A-02]Demonstration of Superior Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC Split-Gate Octagonal Cell MOSFETs compared with Linear, Square, and Hexagonal Topologies

*Kijeong Han¹, Ajit Kanale¹, B. Jayant Baliga¹, Subhashish Bhattacharya¹(1. North Carolina State Univ.(United States of America))

[Tu-2A-03]Field Stabilizing Trench-Etched DMOS for Suppression of Performance Variation

*Takeru Suto¹, Naoki Watanabe¹, Yuan Bu¹, Hiroshi Miki¹, Naoki Tega¹, Yuki Mori¹, Digh Hisamoto¹, Akio Shima¹(1. Hitachi, Ltd.(Japan))

[Tu-2A-04]Experimental Study of Switching and Short-Circuit Performance of 1.2kV 4H-SiC Accumulation and Inversion Channel Power MOSFETs

*Aditi Agarwal¹, Ajit Kanale¹, Kijeong Han¹, B. Jayant Baliga¹, Subhashish Bhattacharya¹(1. NC State University(United States of America))

[Tu-2A-05]Superior turn-on loss characteristics of 1.2 kV SiC IE-UMOSFET with a very short channel length.

*Taiga Kanamori¹, Ruito Aiba¹, Masataka Okawa¹, Shinsuke Harada², Hiroshi Yano¹, Noriyuki Iwamuro¹(1. Univ. of Tsukuba(Japan), 2. National Inst. of Advanced Indus. Sci. and Tech.(Japan))

[Tu-2B-01(Invited)]Status of Large Diameter Semi Insulating and N-Type Single Crystals at II-VI Advanced Materials

*Rajan Rengarajan¹, A. Gupta¹, X. Xu¹, K. Yang¹, I. Zwieback¹, G. Ruland¹(1. II-VI Advanced Materials(United States of America))

[Tu-2B-02]Growth of 50 mm useable height 150 mm 4H-SiC, defect conversion and reduction by thermal treatment and their characterization

*SRaghavan Parthasarathy¹, Roman Drachev¹, Bob Berliner¹, Bala Bathey¹, Henry Chou¹(1. GT Advanced Technologies Tech(United States of America))

[Tu-2B-03]Growth and Characterization of Al-Doped p-type 4H-SiC Grown by PVT

*Kazuma Eto¹, Hiromasa Suo^1,2, Tomohisa Kato¹, Hajime Okumura¹(1. National Institute of Advanced Industrial Science and Technology (AIST)(Japan), 2. Showa Denko K. K.(Japan))

[Tu-2B-04]Prospects of bulk growth of 3C-SiC using sublimation growth

*Peter J Wellmann¹, Philipp Schuh¹, M. Schöler¹, J. Steiner¹, M. Zielinski², M. Mauceri³, G. Litrico⁴, F. La Via⁴(1. Univ. of Erlangen (FAU)(Germany), 2. NOVASIC(France), 3. LPE S.P.A.(Italy), 4. CNR-IMM(Italy))

[Tu-2B-05]PVT Growth and Manufacturing of 2-Inch AlN Single Crystal Substrates

*Rafael Dalmau¹, Jeffrey Britt¹, Raoul Schlesser¹(1. HexaTech, Inc.(United States of America))

[Tu-2B-06LN]Investigation of Dislocation Behavior at the Early Stage of PVT-grown 4H-SiC Crystals

*Tuerxun Ailihumaer¹, Balaji Raghothamachar¹, Michael Dudley¹, Gilyong Chung², Ian Manning², Edward Sanchez²(1. Stony Brook Univ.(United States of America), 2. DuPont Inc.(United States of America))

[Tu-3A-01(Invited)]Interface State Density Distributions near The Conduction Band Edge Originating from The Conduction Band Fluctuation in SiO₂/SiC Systems

*Koji Ito¹, Takuma Kobayashi¹, Tsunenobu Kimoto¹(1. Kyoto Univ.(Japan))

[Tu-3A-02]Calculation of mobility and localized-state density at SiO₂/SiC interface with random fluctuation

*Hironori Yoshioka¹(1. National Institute of Advanced Industrial Science and Technology (AIST)(Japan))

[Tu-3A-03]Depth-Resolved Analysis of the SiO₂/4H-SiC Interface using Low-Energy Muons

*Judith Woerle^1,2, Thomas Prokscha², Ulrike Grossner¹(1. ETH Zurich(Switzerland), 2. Paul Scherrer Institute(Switzerland))

[Tu-3A-04]Evidence of a Transition Layer at the SiO₂ / 4H-SiC MOS Interface from AC Conductance Data

*James A Cooper¹(1. Sonrisa Research, Inc. and Purdue University(United States of America))