2024 International Conference on Solid State Devices and Materials

[PS-01-01]A Novel Self-Aligned Backside Contact Architecture for Advanced Logic Nodes

〇QingPeng Wang¹, Sumant Sarkar², TaeYeon Oh³
(1. Lam Research (China), 2. Lam Research (United States of America), 3. Lam Research (Korea))

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[PS-01-02]Germanium Gate Stack Fabrication at Low Temperature
using Nonheated Atomic Layer Deposition

〇Taisei Aso¹, Hajime Kuwazuru¹, Dong Wang¹, Keisuke Yamamoto¹
(1. Kyushu Univ. (Japan))

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[PS-01-03]Logic Cell of CFET Based on Double-Cell-Height to Enhance Intra-Cell Connectivity

〇Liang-Chi Huang¹, Pen-Yi Chu¹, Ko-Cheng Lu¹, Wei-Cheng Kang¹, Bo-Hsun Juan¹, Tzu-Yin Chen¹, Bi-Xian Wu¹, Tzu-Hsuan Chang¹
(1. National Taiwan University (Taiwan))

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[PS-01-04]Performance Evaluation of Cold CFET considering Contact-Placement dependent Gate Resistance Effects

〇Shu-Han Li¹, Pin Su¹
(1. National Yang Ming Chiao Tung Univ. (Taiwan))

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[PS-01-05]Neural Network Prediction of Cryogenic BSIM4 Model Parameters Utilizing a Small Experimental Data Set

〇Takumi Inaba¹, Yusuke Chiashi¹, Hiroshi Oka¹, Minoru Ogura¹, Hidehiro Asai¹, Shota Iizuka¹, Kimihiko Kato¹, Shunsuke Shitakata¹, Hiroshi Fuketa¹, Takahiro Mori¹
(1. National Institute of Advanced Industrial Science and Technology (Japan))

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[PS-01-06]Reconfigurable-FETs based on CMOS-Compatible Synapse Transistors with inorganic-organic hybrid Methyl-Silsesquioxanes-Based Electrical Double Layer

〇Seung-Hyun Lee¹, Won-Ju Cho¹
(1. The Univ. of Kwangwoon (Korea))

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[PS-01-07]Investigation of Layout Optimization on the Self-heating Effects and Logic Performance of 6T-SRAM Based on Nanosheet and Forksheet FET

〇Pan Zhao¹, Tao Yu Zhou¹, Nai Qi Liu¹, Yan Dong He¹, Gang Du¹
(1. Peking University (China))

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[PS-01-08]Interfacial Trap Density Investigation of HfO₂-ZrO₂ Superlattice Gate Stacks with Ultra-low Equivalent Oxide Thickness

〇kun zhong^1,2,3, Zhaohao Zhang^1,2,3, Siyuan Liu^1,2,3, Yueyuan Zhang^1,2,3, Huaxiang Yin^1,2,3
(1. University of Chinese Academy of Sciences (China), 2. Institute of Microelectronics of the Chinese Academy of Sciences (China), 3. Integrated Circuit Advanced Process R&D Center and State Key Laboratory of Fabrication Technologies for Integrated Circuits (China))

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[PS-01-09]Charge-Trapping Optoelectronic Memcapacitors Achieving Photoelectric Perception, Storage, and Reconfigurable In-memory Logics

〇Ning Liu¹, Siying Zheng², Jiuren Zhou^1,2, Yan Liu^1,2, Genquan Han^1,2, Yue Hao¹
(1. School of Microelectronics, Xidian Univ. (China), 2. Hangzhou Inst. of Tech., Xidian Univ. (China))

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[PS-01-10]Effect of Random Potential on Two-dimensional Electronic States

〇Nobuya Mori¹
(1. Osaka University (Japan))

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[PS-01-11]Comprehensive Study on the Frequency Stability Characteristics of HfO₂-ZrO₂ Superlattice Ferroelectric Films

〇Qiuxia Wu¹, Yue Peng¹, Mingshuang Kang¹, Chunfu Zhang¹, Xiaohua Ma¹, Yue Hao¹
(1. Wide Bandgap Semiconductor Tech. Disciplines State Key Lab., School of Microelectronics, Xidian Univ. (China))

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[PS-01-12]Effect of Non-Uniform Polycrystallinity on Ferroelectric Electrostatic Doped Transistor Variability

〇xinghui wang¹, Siying Zheng², Jiuren Zhou^1,2, Hongrui Zhang², Yan Liu^1,2, Yue Hao^1,2, Genquan Han^1,2
(1. School of Microelectronics, xidian Univ. (China), 2. Hangzhou Inst. of Tech., Xidian Univ. (China))

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[PS-01-13]Texture of Orthorhombic ScSi in Annealed TiN / Sc / Si(:P)(001) Contact Stacks

〇Bert Pollefliet¹, Clement Porret², Christophe Detavernier³, Jean-Luc Everaert², Kiroubanand Sankaran², Erik Rosseel², Roger Loo², André Vantomme¹, Clement Merckling¹
(1. KU Leuven (Belgium), 2. imec (Belgium), 3. Ghent University (Belgium))

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[PS-01-14]AR-HAXPES Evaluation of the Effect of Hydrogen Plasma Treatment on the Chemical Bonding State and Distribution of Hydrogen in SiN Films

〇Yoshiharu Kirihara¹, Haruto Omata¹, Akira Yasui², Kiyokazu Nakagawa³, Yuichiro Mitani¹, Hiroshi Nohira¹
(1. Tokyo City Univ. (Japan), 2. JASRI (Japan), 3. Abit Technologies (Co. Ltd.) (Japan))

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[PS-01-15]Analysis of AC Degradation in SiON pMOSFET by Extraction of Threshold Voltage Degradation Profile

〇Donghee Son¹, Yeohyeok Yun²
(1. Samsung Electronics (Korea), 2. Korea University of Technology and Education(KOREATECH) (Korea))

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[PS-01-16]Atomic-Scale Insights into the Effects of Biaxial Strain on the Electronic Structure of Orthorhombic Hf_0.5Zr_0.5O₂

〇Yu Hong Chen¹、Chen You Wei²、Yi Ju Yao²、Fu Ju Hou³、Guang Li Luo³、Yung Chun Wu^1,2

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[PS-02-01]Ozone SiO₂/HfO₂ Interface Engineering for Performance and Reliability Optimization of Hf_0.5Zr_0.5O₂ FeFETs: Device Integration and Electrical Investigation

〇Xueyang Li¹, Yaxuan Yuan¹, Chengji Jin², Xinze Li¹, Xiao Yu², Ran Cheng¹, Genquan Han³
(1. The Univ. of Zhejiang (China), 2. The Lab. of Zhejiang (China), 3. The Univ. of Xidian (China))

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[PS-02-02]Analysis of reliability improvement in HfO₂-based ferroelectric capacitorsby ozone oxidation of the bottom electrode

〇Yuki Itoya¹, Takuya Saraya¹, Toshiro Hiramoto ¹, Masaharu Kobayashi ^1,2
(1. Univ. Tokyo Inst. Indus. Sci. (Japan), 2. Univ. Tokyo d.lab (Japan))

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[PS-02-03]Improved Memory Window and Endurance of FeFET using Laminated Thin Films and Fluorine Plasma Passivation for Analog Synaptic Characteristics

〇Kyungsoo Park¹, Chulwon Chung², Boncheol Ku¹, Seung Hyeon Yun¹, Junhyeok Park¹, Changhwan Choi¹
(1. Division of Materials Science and Engineering, Univ. of Hanyang (Korea), 2. Department of Energy Engineering, Univ. of Hanyang (Korea))

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[PS-02-04]Withdrawn

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[PS-02-05]Withdrawn

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[PS-02-06]New insight into memory window engineering in FeFET with oxide semiconductor

〇Zikang Yao¹, Tianning Cui¹, Danyang Chen¹, Yulong Dong¹, Zhiyu Lin¹, Mengwei Si¹, Xiuyan Li¹
(1. Shanghai Jiao Tong Univ. (China))

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[PS-02-07]Comparative Study of Polysilicon and MoS₂ Channel Based 3D NAND

〇Mohd Ashraf Lone¹, Dibyadrasta Sahoo¹, Imtiyaz Ahmad Khan¹, Sanjeev Kumar Manhas¹
(1. Indian Institute of Technology Roorkee (India))

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[PS-02-08]Disturbance Induced Refresh Time Lowering in Nanowire RFET 1T-DRAM Array

Rohit Kumar Nirala¹, Manish Gupta², 〇Abhinav Kranti¹
(1. Indian Inst. of Tech. Indore (India), 2. Birla Inst. of Tech. and Sci., Pilani, K. K. Birla, Goa Campus (India))

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[PS-02-09]Nitrogen Incorporated Interlayer for Enhanced Hf-Zr-O Ferroelectric Tunnel Junctions in Ternary-Content-Addressable-Memory

〇Jaekyeong Kim¹, Manh-Cuong Nguyen^1,2, An Hoang-Thuy Nguyen¹, Anh-Duy Nguyen¹, Hyunsoo Kim¹, Kyungsoo Hwang¹, Geon Park¹, Hoyeon Shin¹, Siun Song¹, Daewoong Kwon², Rino Choi¹
(1. Inha Univ. (Korea), 2. Hanyang Univ. (Korea))

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[PS-02-10]Guidelines for Achieving Optimal Classification Accuracy through Unsupervised Learning in Spiking Neural Network Using FeFETs-based Synapses

〇Chung-Li Chang¹, Hao-Kai Peng¹, Shun-Chi Wu¹, Yung-Hsien Wu¹
(1. National Tsing Hua Univ. (Taiwan))

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[PS-02-11]Analysis of Cell Characteristic using Back Oxide Trap Charge Effect in 3D-NAND Flash

Daewoong Kang¹, 〇Chaeyeon Jung^1,2, Minkyo Suh^1,3, Gwansun Choi^1,3, Youngho Jung⁴
(1. Seoul National University (Korea), 2. Soongsil University (Korea), 3. Chung-Ang University (Korea), 4. Daegu University (Korea))

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[PS-02-12]Analysis of Cell Characteristics depending on Vertical Channel Profile and Multiple Dielectric WL Spacer in 3D NAND Flash Memory

Daewoong Kang¹, 〇Gwansun Choi^1,2, Minkyo Suh^1,2, Chaeyeon Jung^1,3, Youngho Jung⁴
(1. Seoul National University (Korea), 2. Chung-Ang University (Korea), 3. Soongsil Univ. (Korea), 4. Daegu University (Korea))

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[PS-02-13]Investigation of Void Effect Inside Epi-plug on Electrical Characteristics of NAND Flash Memory

〇Dibyadrasta Sahoo¹, Ankit Gaurav¹, Mohd Ashraf Lone¹, Sanjeev kumar Manhas¹
(1. Indian Inst. of Tech. Roorkee (India))

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[PS-02-14]Fatigue Recovery and Endurance Improvement under Low Operating Voltage of HfZrO₂/Ge MF(I)S Capacitor fabricated at BEOL-Compatible Temperature

〇Jai-Youn Jeong^1,2, Kyeol Ko¹, Kyunghwan Kim¹, Changhwan Shin², Jae-Hoon Han¹
(1. The Korea Inst. of Science and Technology (KIST) (Korea), 2. The Korea Univ. (Korea))

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[PS-02-15]Unipolar RRAM Cells Enabled by Hetero-Complex-Oxide Stack for Ultra-Speed Multilevel Programming

〇Jun-Peng Lee¹, Chun-Chien Chiu⁴, Yu-Wei Chen¹, Bo-Cheng Chen², I-Ling Li³, Yu-Ting Wang², Zhih-Yun Kuo³, Ning-Yuan Lue¹, Jan-Chi Yang⁴, Chao-Hui Yeh^1,2,3
(1. Inst. of Electronics Engineering, National Tsing Hua Univ. (Taiwan), 2. Department of Electrical Engineering, National Tsing Hua Univ., (Taiwan), 3. College of Semiconductor Research, National Tsing Hua Univ. (Taiwan), 4. Department of Physics, National Cheng Kung Univ. (Taiwan))

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[PS-02-16]Withdrawn

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[PS-02-17]TiO_x/TaO_x-Based Optoelectronic Neuro-synaptic ReRAM Device

〇Saransh Shrivastava¹, Jhih-Ling Guo¹, Hans Juliano¹, Tseung-Yuen Tseng¹
(1. Inst. of Electronics, National Yang Ming Chiao Tung Univ. (NYCU), Hsinchu 30010, Taiwan (Taiwan))

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[PS-02-18]High Performance BEoL-Compatible FeRAM with Robust Endurance >10⁹ Cycles by Two P_r > 32 uC/cm² HfZrO₂ Ferroelectric Film and CAAC-IGZO as Low Leakage Transistor

〇Hiroshi Yoshida¹, Min-Hung Lee², Shang-Shiun Chuang¹, Chuan-Hua Chang¹, Wen-Hsiang Hsieh¹, Yung-Lung Hsu¹, Shih-Chi Yen¹, Zong-Han Li², Fu-Sheng Chang², Ming-Han Liao³, Shou-Zen Chang¹
(1. Powerchip Semiconductor Manufacturing Corporation (Taiwan), 2. Graduate School of Advanced Technology, National Taiwan University (Taiwan), 3. Graduate School of Advanced Technology and Department of Mechanical Engineering, National Taiwan University (Taiwan))

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[PS-02-19]Si-Te-N-O amorphous chalcogenide for selector device with high thermal stability

〇Kentaro Saito¹, Shogo Hatayama¹, Yuta Saito^1,2
(1. The Inst. of AIST (Japan), 2. The Univ. of Tohoku (Japan))

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[PS-02-20]Analysis of Intermediate State in MgO-based MTJ Switching

〇Chihiro Watanabe¹, Yuya Miyazaki¹, Junichi Tsuchimoto², Hiroyuki Hosoya³, Kazuto Yamanaka³, Yoshiteru Amemiya², Akinobu Teramoto^1,2,4
(1. Grad. Sch. of Adv. Sci. and Eng., Hiroshima Univ. (Japan), 2. Res. Inst. for Semiconductor Eng., Hiroshima Univ. (Japan), 3. CANON ANELVA Corp. (Japan), 4. Res. Inst. for Synchrotron Radiation Sci., Hiroshima Univ. (Japan))

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[PS-02-21]Improving the TER by Incorporating Antiferroelectric HZO Layer in 5 nm Thin MFM FTJ

〇Geon Park¹, ManhCuong Nguyen¹, AnHoang Nguyen¹, AnhDuy Nguyen¹, Hyunsoo Kim¹, Kyungsoo Hwang¹, Jaekyeong Kim¹, Hoyeon Shin¹, Siun Song¹, Rino Choi¹
(1. Inha Univ. (Korea))

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[PS-02-22]Comparative Study on Transistor Structures for IGZO-Based FeTFTs

〇He Young Kang¹, Seung Hee Cha¹, Jae Kyeong Jeong¹
(1. Hanyang University (Korea))

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[PS-02-23]Improving switching uniformity through nitrogen doping in CMOS process-compatible Ta₂O₅-based ReRAM device

〇youna kwon¹, Won-Chul Lee¹, Gapseop Sim¹, Woo-Suk Sul¹, Jongwon Lee²
(1. The Inst. of NNFC (Korea), 2. Univ. of Chungnam (Korea))

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[PS-02-24]Time dependance changes of interface states in Nb-doped SrTiO₃/Pt ReRAM

〇Yumeng Zheng¹, Tomohiro Ishii¹, Kentaro Kinoshita¹
(1. Tokyo univ. of science (Japan))

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[PS-02-25]HfO2-ZrO2 Superlattice Ferroelectric FinFET with Low-Temperature Poly-Siusing Green Laser Crystallization for BEOL applications

〇Chen-You Wei¹、Yung-Teng Fang²、Yi-Ju Yao¹、Chih-Chao Yang³、Fu-Ju Hou³、Guang-Li Luo³、Yung-Hsien Wu²、Yung-Chun Wu²
(1. College of Semiconductor Research, National Tsing Hua University (Taiwan)、2. Department of Engineering and System Science, National Tsing Hua University (Taiwan)、3. Taiwan Semiconductor Research Institute (Taiwan))

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[PS-02-26]Multibit P-type Fe-GAAFETs Utilizing HfO₂/ZrO₂ Superlattice Dielectric and SiGe/Si Superlattice Channel with Record Characteristics via Quantum Mechanisms for High-Density 1T NVM Applications

〇Yi Ju Yao¹、Tsai Jung Lin¹、Bo Xu Chen²、Chen You Wei¹、Yung Teng Fang²、Heng Jia Chang²、Yu Min Fu1、Guang Li Luo³、Fu Ju Hou³、Yung Chun Wu^1,2
(1. College of Semiconductor Research, National Tsing Hua University (Taiwan)、2. Department of Engineering and System Science, National Tsing Hua University (Taiwan)、3. Taiwan Semiconductor Research Institute (Taiwan))

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[PS-02-27 (Late News)]Mott Transition Switching Phenomenon of Carbon-doped HfO_x Thin Film and Application to CeRAM

〇Masamichi Azuma^1,2, Mamoru Ikeda¹, Tsubasa Miyamoto¹, Hiroyuki Nishinaka¹
(1. Kyoto Institute of Technology (Japan), 2. Symetrix Corp. (United States of America))

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[PS-02-28 (Late News)]Experimental Implementation of 4-bit Carry Lookahead Adder in Memristor Crossbar Array using Threshold Logic

〇Sangwook Youn¹, Jinwoo Park¹, Hyungjin Kim¹
(1. Hanyang University (Korea))

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[PS-02-29 (Late News)]"Correlation between fundamental properties and current density in perovskite oxide resistance change memory Pt/Nb:SrTiO₃"

〇Ryosuke Ohtani¹, Yumeng Zheng¹, Kentaro Kinoshita¹
(1. Tokyo Univ. of Sci. (Japan))

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[PS-03-01]Investigation of Propagation Directions on GaN Surface Acoustic Wave Resonators Toward Wide Temperature Range Applications

〇Guofang Yu¹, Renrong Liang¹, Jun Fu¹, Jun Xu¹, Tian-Ling Ren¹, Jingqing Du², Di Zhao²
(1. Tsinghua Univ. (China), 2. Beijing Sevenstar Flow Corp., Ltd. (China))

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[PS-03-02]Improvement of Uniformity by Face-to-Face Ultra-High-Pressure Annealing Observed by Scanning Internal Photoemission Microscopy Using Au/Ni/n-GaN Schottky Contacts

〇Kenji Shiojima¹, Yasuho Matsumoto¹, Hiroki Imabayashi¹, Tetsu Kachi²
(1. Univ. of Fukui (Japan), 2. Nagoya Univ. (Japan))

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[PS-03-03]Size effect on mechanical characteristics of 3D-printed resin nanowires

〇Masao Torii¹
(1. Kyoto University of Advanced Science in Nanomechatronics Lab. (Japan))

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[PS-03-04]Consideration on the electrochemical behavior of graphene dispersed in aqueous solution

〇Naoki Okamoto¹, Rei Miyake¹, Takeyasu Saito¹
(1. Osaka Metropolitan Univ. (Japan))

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[PS-03-05]Control of Surface Oxidation and Stress by Additives in Ni Electrodeposition

〇Takeyasu Saito¹, Kohei Yamada¹, Ryosuke Komoda¹, Naoki Okamoto¹
(1. Osaka Metropolitan University (Japan))

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